Dr. Max Bügler Profile

Dr. Max Bügler

at Technische Univ Berlin

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Author

Publications (3)

Proceedings Article | 15 October 2012 Paper

Effect of V/III molar ratio on the structural and optical properties of InN epilayers grown by HPCVD

Ramazan Atalay, Max Buegler, Sampath Gamage, M. K. Senevirathna, Bahadir Küçükgök, Andrew Melton, Axel Hoffmann, A. G. Unil Perera, Ian Ferguson, Nikolaus Dietz

Proceedings Volume 8484, 84840X (2012) https://doi.org/10.1117/12.930199

KEYWORDS: Indium nitride, Raman spectroscopy, Phonons, FT-IR spectroscopy, Infrared spectroscopy, Optoelectronics, Crystals, X-ray diffraction, Reflectance spectroscopy, Spectroscopy

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Proceedings Article | 18 August 2010 Paper

Reactor pressure: growth temperature relation for InN epilayers grown by high-pressure CVD

M. Buegler, S. Gamage, R. Atalay, J. Wang, I. Senevirathna, R. Kirste, T. Xu, M. Jamil, I. Ferguson, J. Tweedie, R. Collazo, A. Hoffmann, Z. Sitar, N. Dietz

Proceedings Volume 7784, 77840F (2010) https://doi.org/10.1117/12.860952

KEYWORDS: Indium nitride, Chemical vapor deposition, Raman spectroscopy, Crystals, Infrared spectroscopy, Indium, Heterojunctions, Gallium nitride, Nitrogen, Sapphire

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Proceedings Article | 18 August 2009 Paper

Optical and structural properties of InN grown by HPCVD

M. Buegler, M. Alevli, R. Atalay, G. Durkaya, I. Senevirathna, M. Jamil, I. Ferguson, N. Dietz

Proceedings Volume 7422, 742218 (2009) https://doi.org/10.1117/12.828163

KEYWORDS: Indium nitride, Raman spectroscopy, Crystals, Sapphire, Chemical vapor deposition, Luminescence, Sensors, Gallium nitride, X-ray diffraction, Chemical analysis

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