This paper describes the successful combination of masking or beam shaping elements based on thin membranes with the thermally ultra-stable properties of the ULE [1] glass substrate material. These kind of elements can be used in transmission in the optical beam path of EUV systems.
By applying a combination of new technologies, thin membranes can be directly manufactured on ULE substrates. The thermal expansion properties of the membrane based transmissive optical elements are dominated by ULE substrate. These elements enable a position stability of features in the range of 10-8/Kelvin for element sizes with a length of up to 150 mm.
The combination of technologies enables also the structuring of features with critical dimensions in the range of 100 nm on the membrane. The features on the membranes are for example absorbing or phase shifting structures or even holes. Holes in the membrane with diameters down to 200 nm have been demonstrated using e-beam based technologies.
These kind of transmissive optical elements could be used in EUV exposure systems, actinic mask inspection systems or other optical systems which are using light in the EUV wavelength range.
In this paper a new approach for the realisation of a passive matrix image projection display consisting of electrostatic actuated Fabry-Perot filters for digital wavelength switching is presented. The switches either may be working by illumination with polychromatic or with monochromatic light, e.g. by a laser. In the first case the output light has to be filtered at the desired wavelength. In order to define the interferometric properties of the dielectric layers and thus the switching wavelength optical parameters like thickness and refractive index have to be adjusted carefully. The display switches can be adapted either to reflection or transmission mode, depending on whether silicon or quartz is used as substrate material. Especially hexagonal shaped pixel membranes for working either in reflection at a wavelength of 536 nm or in transmission for 500 nm are described. The assembly is arranged matrix-like in rows and columns, where at each intersection point a pixel is located. The switching of a pixel into the 'on'-state is achieved by applying a voltage on the corresponding row and column contact lines of the display. The resulting intersection potential deflects the addressed pixel membrane whereas adjacent pixels are nearly not affected. Actual measurements allow high switching frequencies of about 2 kHz at voltages in the range of 2 - 60 V, depending on the pixel design. The switching contrast maximum is aobut 80%, the contrast beteeen addressed and non-addressed adjacent pixels is 75%.
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