Mr. Michael E. Kling Profile

Michael E. Kling

System Engineer

SPIE Involvement:

Author

Publications (10)

Proceedings Article | 3 October 2019 Paper

Characterization of EUV image fading induced by overlay corrections using pattern shift response metrology

Daniel Schmidt, Roger Cornell, Michael Kling, Allen Gabor, Christopher Ausschnitt

Proceedings Volume 11147, 1114713 (2019) https://doi.org/10.1117/12.2536690

KEYWORDS: Metrology, Semiconducting wafers, Overlay metrology, Reticles, Extreme ultraviolet, Pellicles, Extreme ultraviolet lithography, Scanners, Image processing

Read Abstract +

Proceedings Article | 19 March 2018 Presentation + Paper

Holistic analysis of aberration induced overlay error in EUV lithography

Yulu Chen, Lars Liebmann, Lei Sun, Allen Gabor, Shuo Zhao, Feixiang Luo, Obert Wood, Xuemei Chen, Daniel Schmidt, Michael Kling, Francis Goodwin

Proceedings Volume 10583, 105830D (2018) https://doi.org/10.1117/12.2297027

KEYWORDS: Aberration theory, Zernike polynomials, Diffraction, Extreme ultraviolet lithography, Wavefronts, Error analysis, Scanners, Photomasks, Overlay metrology, Lithography

Read Abstract +

Proceedings Article | 27 March 2007 Paper

Patterning control budgets for the 32-nm generation incorporating lithography, design, and RET variations

Kevin Lucas, Chris Cork, Jonathan Cobb, Brian Ward, Martin Drapeau, Charlie Zhang, John Allgair, Mike Kling, Mike Rieger

Proceedings Volume 6520, 65200N (2007) https://doi.org/10.1117/12.715166

KEYWORDS: Optical lithography, Optical proximity correction, Error analysis, Resolution enhancement technologies, SRAF, Lithography, OLE for process control, Photomasks, Manufacturing, Metrology

Read Abstract +

An important outcome of the 90nm and 65nm device generations was the realization that new methods for predicting and controlling patterning were required to ensure successful transfer for all design rule compliant features through the required process window. This realization led to a strong increase in the use of CD-based and process window aware post-optical proximity correction (OPC) verification in production mask tapeouts. Accurate post-OPC verification is a necessity but many patterning issues could have been detected and removed earlier in the product development lifecycle. Of course, the 45nm and 32nm device generations are only expected to further strain the ability of device manufacturers to predict process control requirements, robust patterning design rules and first-time right reticle enhancement technology (RET) recipes. Therefore, improvements to the traditional process, OPC and design rule prediction/evaluation steps are needed. In this paper we propose a patterning and CD control prediction methodology which incorporates not only the traditional dose, defocus and mask variation parameters but also implements RET parameter variations such as layout edge discretization, model inaccuracy, metrology error and assist feature placement. This methodology allows a more accurate prediction of process control requirements, worst case CD control layout geometries and RET subsystem accuracy/control requirements. Lithography engineers have long operated with specific (if not always fully understood) dose and focus control success requirements. To efficiently determine real worst design situations, we utilize a new methodology for quickly verifying the RET-ability of a lithography process + design rule set + OPC correction recipe based on coupling iterative layout generation with OPC testing. Our aim in this paper is to provide additional engineering rigor to the traditional experience-based OPC success requirements by looking at the total Litho + RET + metrology patterning problem and analyzing the individual component control needs.

Proceedings Article | 14 September 2001 Paper

Effects of complementary phase-shift imaging on gate CD control

Carla Nelson-Thomas, Michael Kling, Matthew Thompson, Ruoping Wang, Nigel Cave, Chong-Cheng Fu

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435746

KEYWORDS: Critical dimension metrology, Phase shifts, Binary data, Optical lithography, Optical proximity correction, Cadmium, Data conversion, Chromium, Semiconducting wafers, Logic

Read Abstract +

Proceedings Article | 30 December 1999 Paper

Cost analysis of 4x and 6x 9-in. reticles for future lithography

Lloyd Litt, Michael Kling, Terry Perkinson

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373319

KEYWORDS: Reticles, Photomasks, Semiconducting wafers, Manufacturing, Lithography, Glasses, Scanners, Semiconductor manufacturing, Semiconductors, Optimization (mathematics)

Read Abstract +

Proceedings Article | 26 July 1999 Paper

Practicing extension of 248-nm DUV optical lithography using trim-mask PSM

Michael Kling, Nigel Cave, Bradley Falch, Chong-Cheng Fu, Kent Green, Kevin Lucas, Bernard Roman, Alfred Reich, John Sturtevant, Ruiqi Tian, Drew Russell, Linard Karklin, Yao-Ting Wang

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354297

KEYWORDS: Photomasks, Binary data, Reticles, Deep ultraviolet, Optical proximity correction, Optical lithography, Optics manufacturing, Manufacturing, Etching, Phase shifts

Read Abstract +

Proceedings Article | 26 July 1999 Paper

Characterization of CD control for sub-0.18-um lithographic patterning

John Sturtevant, John Allgair, Chong-Cheng Fu, Kent Green, Robert Hershey, Michael Kling, Lloyd Litt, Kevin Lucas, Bernard Roman, Gary Seligman, Mike Schippers

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354335

KEYWORDS: Critical dimension metrology, Error analysis, Optical lithography, Semiconducting wafers, Reticles, Metrology, Deep ultraviolet, Lithography, Reflectivity, Resistance

Read Abstract +

Proceedings Article | 29 June 1998 Paper

0.25-um logic manufacturability using practical 2D optical proximity correction

Michael Kling, Kevin Lucas, Alfred Reich, Bernard Roman, Harry Chuang, Percy Gilbert, Warren Grobman, Edward Travis, Paul Tsui, Tam Vuong, Jeff West

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310749

KEYWORDS: Optical proximity correction, Reticles, Metals, Inspection, Logic, Optical lithography, Calibration, Manufacturing, Etching, Lithium

Read Abstract +

Proceedings Article | 8 June 1998 Paper

Manufacturability of subwavelength features using reticle and substrate enhancements

Martin McCallum, Kevin Lucas, John Maltabes, Michael Kling

Proceedings Volume 3332, (1998) https://doi.org/10.1117/12.308748

KEYWORDS: Reticles, Critical dimension metrology, Deep ultraviolet, Reflectivity, Lithography, Optical lithography, Optical proximity correction, Manufacturing, Silicon, Photoresist materials

Read Abstract +

Proceedings Article | 27 December 1996 Paper

Reticle cleanliness and handling issues in submicron wafer fabrication

Michael Kling

Proceedings Volume 2884, (1996) https://doi.org/10.1117/12.262842

KEYWORDS: Reticles, Pellicles, Semiconducting wafers, Photomasks, Contamination, Particles, Glasses, Optical alignment, Standards development, Manufacturing

Read Abstract +

Showing 5 of 10 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years