In this talk we will review our recent demonstrations of mid-IR lasers grown on (001) Si or Ge substrates (diode lasers, interband cascade lasers, quantum cascade lasers) and compare their performance to those grown on their native substrates. We will demonstrate light coupling from lasers grown on patterned Si photonics wafers to passive SiN waveguides, with a coupling efficiency in line with simulations. Finally, we will discuss and evaluate strategies to enhance the coupling efficiency.
In this communication we will present the first semiconductor laser grown on a Si photonics platform in a butt-coupling configuration. A GaSb-based diode laser (DL) was grown on a patterned Si photonics wafer equipped with SiN waveguides. Growth and device fabrication challenges arising from the template architecture were overcome to demonstrate several mW outpower of emitted light in continuous wave operation at room temperature. In addition, around 10% of light was coupled into the SiN waveguides, in good agreement with theoretical calculations. This work paves the way to future on-chip sensors.
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