Dr. Morteza Monavarian Profile

Dr. Morteza Monavarian

Senior Research Scientist at Univ of California Santa Barbara

SPIE Involvement:

Author

Area of Expertise:

Optics , Photonics , Semiconductor Optoelectronics , III-V Semiconductor Heterostructures , Light Emitting Diodes

Publications (18)

Proceedings Article | 21 March 2023 Presentation

Carrier dynamics of polar, semipolar, and nonpolar InGaN/GaN LEDs measured by small-signal electroluminescence

Daniel Feezell, Arman Rashidi, Xuefeng Li, Mohsen Nami, Morteza Monavarian, Elizabeth DeJong, Robert Armitage

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2651482

KEYWORDS: Light emitting diodes, Carrier dynamics, Electroluminescence, Modulation, Solid state lighting, Optical testing, Optical communications, Epitaxy, Cladding

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Proceedings Article | 16 February 2020 Presentation + Paper

Nonpolar GaN-based VCSELs with lattice-matched nanoporous distributed Bragg reflector mirrors

Saadat Mishkat-Ul-Masabih, Andrew Aragon, Morteza Monavarian, Ting Luk, Daniel Feezell

Proceedings Volume 11280, 112800I (2020) https://doi.org/10.1117/12.2545030

KEYWORDS: Vertical cavity surface emitting lasers, Quantum wells, Gallium nitride, Resistance, Refractive index, Etching, Reflectivity, Dielectrics, Semiconducting wafers, Distributed Bragg reflectors

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Proceedings Article | 17 September 2018 Presentation

High-speed GaN-based micro-scale light-emitting diodes for visible-light communication (Conference Presentation)

Daniel Feezell, Morteza Monavarian, Arman Rashidi, Mohsen Nami, Andrew Aragon

Proceedings Volume 10754, 1075407 (2018) https://doi.org/10.1117/12.2323266

KEYWORDS: Light emitting diodes, Modulation, Telecommunications, Data communications, Solid state lighting, Wireless communications, Polarization, Gallium nitride

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Proceedings Article | 7 September 2018 Presentation + Paper

Investigation of interfacial impurities in m-plane GaN regrown p-n junctions for high-power vertical electronic devices

Isaac Stricklin, Morteza Monavarian, Andrew Aragon, Greg Pickrell, Mary Crawford, Andrew Allerman, Andrew Armstrong, Daniel Feezell

Proceedings Volume 10754, 1075402 (2018) https://doi.org/10.1117/12.2322005

KEYWORDS: Diodes, Gallium nitride, Silicon, Oxygen, Metalorganic chemical vapor deposition, Carbon

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Proceedings Article | 26 February 2016 Paper

Exciton localization in (11-22)-oriented semi-polar InGaN multiple quantum wells

Morteza Monavarian, Daniel Rosales, Bernard Gil, Natalia Izyumskaya, Saikat Das, Ümit Özgür, Hadis Morkoç, Vitaliy Avrutin

Proceedings Volume 9748, 974826 (2016) https://doi.org/10.1117/12.2213835

KEYWORDS: Excitons, Indium gallium nitride, Quantum wells, Luminescence, Quantum efficiency, Gallium nitride, Heterojunctions, Epitaxial lateral overgrowth, Temperature metrology, Picosecond phenomena, Indium, Lab on a chip, Light emitting diodes, Gallium

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Proceedings Article | 26 February 2016 Paper

Enhancement of indium incorporation to InGaN MQWs on AlN/GaN periodic multilayers

Morteza Monavarian, Shopan Hafiz, Saikat Das, Natalia Izyumskaya, Ümit Özgür, Hadis Morkoç, Vitaliy Avrutin

Proceedings Volume 9748, 974825 (2016) https://doi.org/10.1117/12.2213777

KEYWORDS: Indium gallium nitride, Indium, Gallium nitride, Luminescence, Heterojunctions, Quantum wells, X-ray diffraction, Aluminum nitride, Nanostructures, Quantum efficiency, Indium nitride, Satellites, Gallium

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Proceedings Article | 26 February 2016 Paper

Wurtzite/zinc-blende electronic-band alignment in basal-plane stacking faults in semi-polar GaN

Morteza Monavarian, Shopan Hafiz, Natalia Izyumskaya, Saikat Das, Ümit Özgür, Hadis Morkoç, Vitaliy Avrutin

Proceedings Volume 9748, 974827 (2016) https://doi.org/10.1117/12.2213859

KEYWORDS: Gallium nitride, Interfaces, Ultrafast phenomena, Polarization, Optical spectroscopy, Spectroscopy, Femtosecond phenomena, Electrons, Quantum wells, Picosecond phenomena, Scanning transmission electron microscopy, Laser beam diagnostics, Sapphire, Excitons

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Proceedings Article | 26 February 2016 Paper

Optical investigation of microscopic defect distribution in semi-polar (1-101 and 11-22) InGaN light-emitting diodes

Shopan Hafiz, Nicolas Andrade, Morteza Monavarian, Natalia Izyumskaya, Saikat Das, Fan Zhang, Vitaliy Avrutin, Hadis Morkoç, Ümit Özgür

Proceedings Volume 9748, 974828 (2016) https://doi.org/10.1117/12.2213908

KEYWORDS: Light emitting diodes, Near field optics, Near field scanning optical microscopy, Indium gallium nitride, Luminescence, Epitaxial lateral overgrowth, Nanostructures, Gallium nitride, Indium, Scanning electron microscopy, Quantum efficiency

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