As uncooled microbolometer market grows, there is a need for cost-reduced detectors with the right performance level for the considered market. CMOS devices as transistors or diodes are therefore promising alternatives to standard thermistor materials of microbolometers. In this context CEA LETI developed a 12μm pitch proof of concept of a FDSOI transistor-based microbolometer suspended pixel. The suspended pixel is realized with a 3D integration technological process. This proof of concept aims to validate the technological process by demonstrating pixel capacity to be sensitive to the infrared ux. This work reports details on technological process, electro-optical measurements and discussion on achievable performances.
The development of a new thermometer material at Lynred has opened new opportunities towards a smaller pixel pitch. This pixel pitch reduction leads to several challenges and technological breakthroughs that are necessary both for the bolometer pixel design and the readout circuit architecture. The symposium presentation and the associated article will present a recent development at CEA-leti and Lynred of a 8.5μm bolometer pixel pitch Focal Plane Array (FPA). The drastic reduction of the pixel area leads to important changes of the micro bolometer features, especially a strong decrease of thermal capacitance Cth and increase of the thermal resistance Rth in order to maintain a high detector responsivity. The rise of the noise due to temperature fluctuation or 1/f contributions have also to be considered. The consequences of those modifications and resulting trade-offs, such as pixel fill factor and optical absorption yields in the 8-14 μm band ; pixel self-heating and Read-Out IC (ROIC) dynamic range, will be discussed. Finally, the electro-optical performances of our 640x480 FPAs are presented, and perspectives will be given.
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