The constraints on dilute-nitride Semiconductor Optical Amplifiers (SOAs) for multi-wavelength amplification have
been evaluated. SOAs have been fabricated by angling the facets of a GaInNAs/GaAs edge emitting laser using gas
enhanced focused ion beam etching. The original laser has been characterized in terms of its temperature dependence and
net modal gain. A full width half maximum (FWHM) of 40nm has been found at 298K. Good temperature stability has
also been found with a value of 0.35nm/K for the lasing wavelength. The good temperature stability of the device has
been explained in terms of the role that the monomolecular recombination plays in the temperature dependence of the
device. The monomolecular recombination has been reported temperature independent having two key effects; reduction
of the temperature performance and reduction of the dynamic performance in terms of an increase in the threshold
current and a decrease of the high speed potential. Iodine gas enhanced focused ion beam etching (GAE-FIB) has been
used for the fabrication of the SOA, the iodine gas increasing the etching rate by a factor of 2.5. The fabrication has been
completed in two steps; in the first one the facets have been angled and in the second step a cross-section procedure has
been employed for smoothing of the facets. Once the SOA has been fabricated its potential for simultaneous multiple
channel amplification has been studied. A flat gain spectrum over a range of 40nm has been obtained. This value and the
wavelength range have good agreement with the net modal gain measured in the original laser device. In addition,
minimum channel interspacing has been achieved with no wavelength degradation.
We have used the stochastic Monte-Carlo method to determine the carrier transport studies in the bulk GaInNAs
material. We have incorporated phonon and impurity scattering processes and explicitly considered the role of the
nitrogen impurities as scattering centers. We show that in the expression of the relaxation times it is the perturbed rather
than the free electron density of states that should be incorporated. This is derived from the Green's functions and the
many impurity Anderson model and yields an enhanced scattering rate. The nitrogen impurities can also act as centers
with an infinite scattering cross-section when their broadening becomes infinitely small. We show that the increase of the
electron effective mass in GaInNAs system is more important than the non-parabolicity parameter in the decrease of
mobility. Monte-Carlo calculations take into account the total scattering rate, which is significantly enhanced due to
nitrogen scattering. The average electric field and the average energy are found to decrease with increasing N
concentration and increase of the effective mass.
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