Dr. Noreen Harned Profile

Dr. Noreen Harned

Vice President Marketing & Technology at ASML

SPIE Involvement:

Author

Publications (26)

Proceedings Article | 16 March 2015 Paper

Paper

Performance optimization of MOPA pre-pulse LPP light source

Alexander Schafgans, Daniel Brown, Igor Fomenkov, Rick Sandstrom, Alex Ershov, Georgiy Vaschenko, Rob Rafac, Michael Purvis, Slava Rokitski, Yezheng Tao, Daniel Riggs, Wayne Dunstan, Matthew Graham, Nigel Farrar, David Brandt, Norbert Böwering, Alberto Pirati, Noreen Harned, Christian Wagner, Hans Meiling, Ron Kool

Proceedings Volume 9422, 94220B (2015) https://doi.org/10.1117/12.2087421

KEYWORDS: Extreme ultraviolet, Light sources, Pulsed laser operation, Extreme ultraviolet lithography, Plasma, Amplifiers, High power lasers, Tin, Laser energy, High volume manufacturing

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Proceedings Article | 13 March 2015 Paper

Paper

Performance overview and outlook of EUV lithography systems

Alberto Pirati, Rudy Peeters, Daniel Smith, Sjoerd Lok, Arthur W. Minnaert, Martijn van Noordenburg, Jörg Mallmann, Noreen Harned, Judon Stoeldraijer, Christian Wagner, Carmen Zoldesi, Eelco van Setten, Jo Finders, Koen de Peuter, Chris de Ruijter, Milos Popadic, Roger Huang, Martin Lin, Frank Chuang, Roderik van Es, Marcel Beckers, David Brandt, Nigel Farrar, Alex Schafgans, Daniel Brown, Herman Boom, Hans Meiling, Ron Kool

Proceedings Volume 9422, 94221P (2015) https://doi.org/10.1117/12.2085912

KEYWORDS: Semiconducting wafers, Pellicles, Extreme ultraviolet, Reticles, Extreme ultraviolet lithography, Imaging systems, Logic, Scanners, Manufacturing, Overlay metrology

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Proceedings Article | 17 April 2014 Paper

Paper

Laser produced plasma light source development for HVM

Igor Fomenkov, David Brandt, Nigel Farrar, Bruno La Fontaine, David Myers, Daniel Brown, Alex Ershov, Norbert Böwering, Daniel Riggs, Robert Rafac, Silvia De Dea, Michael Purvis, Rudy Peeters, Hans Meiling, Noreen Harned, Daniel Smith, Robert Kazinczi, Alberto Pirati

Proceedings Volume 9048, 904835 (2014) https://doi.org/10.1117/12.2048195

KEYWORDS: Plasma, Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Tin, Light sources, Deep ultraviolet, Laser development, Hydrogen, Laser applications

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Proceedings Article | 17 April 2014 Paper

Paper

EUV lithography: NXE platform performance overview

Rudy Peeters, Sjoerd Lok, Joerg Mallman, Martijn van Noordenburg, Noreen Harned, Peter Kuerz, Martin Lowisch, Eelco van Setten, Guido Schiffelers, Alberto Pirati, Judon Stoeldraijer, David Brandt, Nigel Farrar, Igor Fomenkov, Herman Boom, Hans Meiling, Ron Kool

Proceedings Volume 9048, 90481J (2014) https://doi.org/10.1117/12.2046909

KEYWORDS: Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Extreme ultraviolet, Logic, Imaging systems, Scanners, Optical proximity correction, Metrology, Photomasks

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Proceedings Article | 18 March 2014 Paper

Paper

LPP EUV source readiness for NXE 3300B

David Brandt, Igor Fomenkov, Nigel Farrar, Bruno La Fontaine, David Myers, Daniel Brown, Alex Ershov, Norbert Böwering, Daniel Riggs, Robert Rafac, Silvia De Dea, Rudy Peeters, Hans Meiling, Noreen Harned, Daniel Smith, Alberto Pirati, Robert Kazinczi

Proceedings Volume 9048, 90480C (2014) https://doi.org/10.1117/12.2048184

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Plasma, Scanners, Control systems, Tin, Reflectivity, Mirrors, Pulsed laser operation, Laser scanners

Read Abstract +

Proceedings Article | 3 October 2013 Paper

Paper

Impact of an etched EUV mask black border on imaging: part II

Natalia Davydova, Robert de Kruif, Hiroaki Morimoto, Yo Sakata, Jun Kotani, Norihito Fukugami, Shinpei Kondo, Tomohiro Imoto, Brid Connolly, Dries van Gestel, Dorothe Oorschot, David Rio, John Zimmerman, Noreen Harned

Proceedings Volume 8880, 888027 (2013) https://doi.org/10.1117/12.2027596

KEYWORDS: Deep ultraviolet, Reflectivity, Reticles, Extreme ultraviolet, Semiconducting wafers, Scanners, Extreme ultraviolet lithography, Photomasks, Optical proximity correction, Aluminum

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Proceedings Article | 1 April 2013 Paper

Paper

ASML's NXE platform performance and volume introduction

Rudy Peeters, Sjoerd Lok, Erwin van Alphen, Noreen Harned, Peter Kuerz, Martin Lowisch, Henk Meijer, David Ockwell, Eelco van Setten, Guido Schiffelers, Jan-Willem van der Horst, Judon Stoeldraijer, Robert Kazinczi, Richard Droste, Hans Meiling, Ron Kool

Proceedings Volume 8679, 86791F (2013) https://doi.org/10.1117/12.2010932

KEYWORDS: Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Scanners, Extreme ultraviolet, Overlay metrology, Image resolution, Mirrors, Lithography, Wafer-level optics

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Proceedings Article | 8 November 2012 Paper

Paper

Impact of an etched EUV mask black border on imaging and overlay

Natalia Davydova, Robert de Kruif, Norihito Fukugami, Shinpei Kondo, Vicky Philipsen, Eelco van Setten, Brid Connolly, Ad Lammers, Vidya Vaenkatesan, John Zimmerman, Noreen Harned

Proceedings Volume 8522, 852206 (2012) https://doi.org/10.1117/12.964547

KEYWORDS: Semiconducting wafers, Reticles, Photomasks, Extreme ultraviolet, Etching, Reflectivity, Deep ultraviolet, Scanning electron microscopy, Optical proximity correction, Extreme ultraviolet lithography

Read Abstract +

There are multiple mask parameters that can be tuned to optimize the lithographic performance of the EUV photo mask[1]. One of them is the absorber height. A reduction of the absorber height allows, for example, a higher resolution patterning on mask and reduces the OPC needed for shadowing correction[1][2][5]. Downside of a thinner absorber is the increased reflectivity which manifests itself not only in the image field (contrast loss) but also in the so called light shield area or image border. The image border is a pattern free (absorber covered) area around the die on the photo mask forming the transition area between the part on the mask that is completely shielded from the exposure light by the Reticle Masking (REMA) blades and the die. The image border accommodates the finite REMA placement accuracy and the half shadow of the REMA blades allowing close spaced die printing on the wafer. When printing a die at dense spacing, which is common practice in a production environment, the image border will overlap part of the neighboring die. This causes actinic EUV and DUV out of band light reflection from the image border exposing the overlapped die area and affecting CD and contrast at the edges of the dies. For a 44 nm thick absorber we found a CD impact of 8 nm for 32 nm dense lines[3] whereas for a 55 nm thick absorber the effect was 4 nm for 27 nm dense lines[7]. Increasing the die spacing would prevent this unwanted exposure but results in an unacceptable loss of valuable wafer real estate thereby reducing the yield per wafer and is thus not a viable manufacturing solution. Optical Proximity Correction (OPC) using ASML Brion’s Tachyon NXE model at the edges of the die was proposed as possible solution to this problem[3]. An alternative is to create a so called Black Border: the reflectivity in the image border is reduced to a sufficiently low level by for example increasing the absorber thickness, add a special coating or replace the absorber with a low reflective material[4][5]. The most radical solution is removal of the absorber and the underlying multilayer down to the low reflective substrate, so-called multilayer etching[4][6]. In this paper we will present the effects of such a Black Border created by a multilayer etch on features and their placement on the reticle and the impact on CD of 27 nm dense lines on the wafer. By comparing the wafer CDU printed with and without Black Border we will determine how well the image border effect is mitigated by the multilayer etching.

Proceedings Article | 16 April 2012 Paper

Paper

EUVL mask performance and optimization

Natalia Davydova, Robert de Kruif, Eelco van Setten, Brid Connolly, Karolien Mehagnoul, John Zimmerman, Noreen Harned, Franklin Kalk

Proceedings Volume 8352, 835208 (2012) https://doi.org/10.1117/12.921209

KEYWORDS: Reflectivity, Photomasks, Apodization, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Refractive index, Calibration, Semiconducting wafers, Scanners

Read Abstract +

EUV lithography requires an exposure system with complex reflective optics and an equally complex EUV dedicated reflective mask. The required high level of reflectivity is obtained by using multilayers. The multilayer of the system optics and the mask are tuned to each other. The mask is equipped with an additional patterned absorber layer. The EUV mask is an optical element with many parameters that contribute to the final image and overlay quality on the wafer and the productivity of the system. Several of these parameters can be tuned for optimal overlay, imaging and productivity results. This should be done with care because of possible interaction between parameters. We will present an overview of the EUV mask contributors to the imaging, overlay and productivity performance for the 27 nm node and below, such as multilayer and absorber stack composition, reflectivity and reflectivity uniformity. These parameters will be reviewed in the context of real-life scanner parameters for the ASML NXE:3100 and NXE:3300 system configurations. The predictions will be compared to actual exposure results on NXE:3100 systems (NA=0.25) for various masks and extrapolated to the NXE:3300 (NA=0.33). In particular, we will present extensive multilayer and absorber actinic spectral reflectance measurements of a state-ofthe art EUV mask over a range of incidence angles corresponding to an NA of 0.33 at multiple positions within the image field. The ML measurements allow calibrating ML stack for imaging simulations. It allows also the estimation of mask-induced apodization effects having impact on overlay. In general, the reflectivity measurements will give detailed variations over the image field of mask parameters such as ML centroid wavelength and absorber reflectivity which contribute to CD uniformity. Such a relation will be established by means of rigorous full stack imaging simulations taking into account optical properties of the coming NXE:3300 system. Based on this investigation we will propose optimal EUV mask parameters for the 22 nm node EUV lithography and below, to provide guidance for mask manufacturers to support the introduction of EUV High Volume Manufacturing.

Proceedings Article | 23 March 2012 Paper

Paper

From performance validation to volume introduction of ASML's NXE platform

Hans Meiling, Wim de Boeij, Frank Bornebroek, Noreen Harned, Ivo de Jong, Peter Kűrz, Martin Lowisch, Henk Meijer, David Ockwell, Rudy Peeters, Eelco van Setten, Judon Stoeldraijer, Christian Wagner, Stuart Young, Ron Kool

Proceedings Volume 8322, 83221G (2012) https://doi.org/10.1117/12.916971

KEYWORDS: Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Extreme ultraviolet, Scanners, Mirrors, Photomasks, Particles, Overlay metrology, Line width roughness

Read Abstract +

Proceedings Article | 14 October 2011 Paper

Paper

Mask aspects of EUVL imaging at 27nm node and below

Natalia Davydova, Eelco van Setten, Sang-In Han, Mark van de Kerkhof, Robert de Kruif, Dorothe Oorschot, John Zimmerman, Ad Lammers, Brid Connolly, Frank Driessen, Anton van Oosten, Mircea Dusa, Youri van Dommelen, Noreen Harned, Jiong Jiang, Wei Liu, Hoyoung Kang, Hua-yu Liu

Proceedings Volume 8166, 816624 (2011) https://doi.org/10.1117/12.896816

KEYWORDS: Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Apodization, Optical proximity correction, Photoresist processing, Scanners, Semiconducting wafers, Multilayers

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Proceedings Article | 7 April 2011 Paper

Paper

EUV lithography at chipmakers has started: performance validation of ASML's NXE:3100

Christian Wagner, Jose Bacelar, Noreen Harned, Erik Loopstra, Stef Hendriks, Ivo de Jong, Peter Kuerz, Leon Levasier, Mark van de Kerkhof, Martin Lowisch, Hans Meiling, David Ockwell, Rudy Peeters, Eelco van Setten, Judon Stoeldraijer, Stuart Young, John Zimmerman, Ron Kool

Proceedings Volume 7969, 79691F (2011) https://doi.org/10.1117/12.878603

KEYWORDS: Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Overlay metrology, Optical proximity correction, Manufacturing, Extreme ultraviolet, Contamination, High volume manufacturing, Optics manufacturing

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Proceedings Article | 26 March 2011 Paper

Paper

The NIST EUV facility for advanced photoresist qualification using the witness-sample test

S. Grantham, C. Tarrio, S. Hill, L. Richter, T. Lucatorto, J. van Dijk, C. Kaya, N. Harned, R. Hoefnagels, M. Silova, J. Steinhoff

Proceedings Volume 7969, 79690K (2011) https://doi.org/10.1117/12.879519

KEYWORDS: Extreme ultraviolet lithography, Semiconducting wafers, Photoresist materials, Extreme ultraviolet, Contamination, Scanners, Electrons, Mirrors, Carbon, Synchrotrons

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Proceedings Article | 20 March 2010 Paper

Paper

EUV into production with ASML's NXE platform

Christian Wagner, Noreen Harned, Peter Kuerz, Martin Lowisch, Hans Meiling, David Ockwell, Rudy Peeters, Koen van Ingen-Schenau, Eelco van Setten, Judon Stoeldraijer, Bernd Thuering

Proceedings Volume 7636, 76361H (2010) https://doi.org/10.1117/12.845700

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Reticles, Optics manufacturing, Lithography, System integration, Mirrors, Lithographic illumination, Optical alignment

Read Abstract +

Proceedings Article | 10 December 2009 Paper

Paper

EUVL: towards implementation in production

Hans Meiling, Nico Buzing, Kevin Cummings, Noreen Harned, Bas Hultermans, Roel De Jonge, Bart Kessels, Peter Kürz, Sjoerd Lok, Martin Lowisch, Joerg Mallman, Bill Pierson, Christian Wagner, Andre Van Dijk, Eelco Van Setten, John Zimmerman, Peter Cheang, Alek Chen

Proceedings Volume 7520, 752008 (2009) https://doi.org/10.1117/12.845781

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Reticles, Reflectivity, Semiconducting wafers, Optics manufacturing, Lithography, Plasma, Tin

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Proceedings Article | 18 March 2009 Paper

Paper

EUVL dosimetry at NIST

C. Tarrio, S. Grantham, M. Cangemi, R. Vest, T. Lucatorto, Noreen Harned

Proceedings Volume 7271, 72713X (2009) https://doi.org/10.1117/12.813690

KEYWORDS: Semiconducting wafers, Extreme ultraviolet, Calibration, Photoresist materials, Extreme ultraviolet lithography, Polymers, Photodiodes, Standards development, Coating, Transmittance

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Proceedings Article | 18 March 2009 Open Access

Open Access

Paper

EUVL system: moving towards production

Hans Meiling, Nico Buzing, Kevin Cummings, Noreen Harned, Bas Hultermans, Roel de Jonge, Bart Kessels, Peter Kürz, Sjoerd Lok, Martin Lowisch, Joerg Mallman, Bill Pierson, Christian Wagner, Andre van Dijk, Eelco van Setten, John Zimmerman

Proceedings Volume 7271, 727102 (2009) https://doi.org/10.1117/12.814041

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Semiconducting wafers, Mirrors, Reticles, Tin, Reflectivity, Plasma, Lithography

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Proceedings Article | 21 March 2008 Paper

Paper

Performance of the full field EUV systems

Hans Meiling, Edwin Boon, Nico Buzing, Kevin Cummings, Olav Frijns, Judy Galloway, Mieke Goethals, Noreen Harned, Bas Hultermans, Roel de Jonge, Bart Kessels, Peter Kürz, Sjoerd Lok, Martin Lowisch, Joerg Mallman, Bill Pierson, Kurt Ronse, James Ryan, Emil Smitt-Weaver, Michael Tittnich, Christian Wagner, Andre van Dijk, John Zimmerman

Proceedings Volume 6921, 69210L (2008) https://doi.org/10.1117/12.773259

KEYWORDS: Extreme ultraviolet, Tin, Extreme ultraviolet lithography, Semiconducting wafers, Mirrors, Printing, Sensors, Stray light, Cameras, Reticles

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Proceedings Article | 13 March 2007 Paper

Paper

EUV lithography with the Alpha Demo Tools: status and challenges

Noreen Harned, Mieke Goethals, Rogier Groeneveld, Peter Kuerz, Martin Lowisch, Henk Meijer, Hans Meiling, Kurt Ronse, James Ryan, Michael Tittnich, Harm-Jan Voorma, John Zimmerman, Uwe Mickan, Sjoerd Lok

Proceedings Volume 6517, 651706 (2007) https://doi.org/10.1117/12.712065

KEYWORDS: Semiconducting wafers, Reticles, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Mirrors, Photomasks, Reflectivity, Tin, Reliability

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Proceedings Article | 22 March 2006 Paper

Paper

First performance results of the ASML alpha demo tool

Hans Meiling, Henk Meijer, Vadim Banine, Roel Moors, Rogier Groeneveld, Harm-Jan Voorma, Uwe Mickan, Bas Wolschrijn, Bas Mertens, Gregor van Baars, Peter Kürz, Noreen Harned

Proceedings Volume 6151, 615108 (2006) https://doi.org/10.1117/12.657348

KEYWORDS: Extreme ultraviolet, Reticles, Semiconducting wafers, Mirrors, Tin, Extreme ultraviolet lithography, Metrology, Reflectivity, Lithography, Contamination

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Proceedings Article | 6 May 2005 Paper

Paper

Development of the ASML EUV alpha demo tool

Hans Meiling, Vadim Banine, Noreen Harned, Brian Blum, Peter Kuerz, Henk Meijer

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.600725

KEYWORDS: Mirrors, Extreme ultraviolet, Tin, Semiconducting wafers, Extreme ultraviolet lithography, Xenon, Reflectivity, Fiber optic illuminators, Coating, Lithography

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Proceedings Article | 20 May 2004 Paper

Paper

Progress in the ASML EUV program

Hans Meiling, Vadim Banine, Peter Kuerz, Noreen Harned

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.534784

KEYWORDS: Semiconducting wafers, Reticles, Extreme ultraviolet lithography, Mirrors, Extreme ultraviolet, Photomasks, Sensors, Metrology, Tin, Reflectivity

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Proceedings Article | 16 June 2003 Paper

Paper

The EUV program at ASML: an update

Hans Meiling, Vadim Banine, Peter Kuerz, Brian Blum, Gert Jan Heerens, Noreen Harned

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.483706

KEYWORDS: Extreme ultraviolet, Reticles, Semiconducting wafers, Mirrors, Extreme ultraviolet lithography, Photomasks, Reflectivity, Particles, EUV optics, Oxidation

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Proceedings Article | 1 July 2002 Paper

Paper

EXTATIC: ASML's alpha-tool development for EUVL

Hans Meiling, Jos Benschop, Robert Hartman, Peter Kuerz, Peter Hoghoj, Roland Geyl, Noreen Harned

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472308

KEYWORDS: Mirrors, Reticles, Extreme ultraviolet lithography, Particles, Metrology, Semiconducting wafers, Extreme ultraviolet, EUV optics, Lithography, Polishing

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Proceedings Article | 26 July 1999 Paper

Paper

Synergistic evolution to production-worthy 30-nm lithography

Daniel Cote, James McClay, Noreen Harned

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354325

KEYWORDS: Lithography, Calcium, Combined lens-mirror systems, Extreme ultraviolet, Reticles, Imaging systems, Scanners, Lens design, Wafer-level optics, EUV optics

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Proceedings Article | 17 May 1994 Paper

Paper

Deep-UV photolithography cluster performance

Noreen Harned

Proceedings Volume 2197, (1994) https://doi.org/10.1117/12.175487

KEYWORDS: Deep ultraviolet, Metrology, Critical dimension metrology, Lithography, Control systems, Optical lithography, Reticles, Semiconducting wafers, Process control, Thin film coatings

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Showing 5 of 26 publications

Proceedings Volume Editor (1)

SPIE Conference Volume | 13 January 2004

Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications

Conference Committee Involvement (1)

Advances in Mirror Technology for X-Ray, EUV Lithography, Laser, and Other Applications

7 August 2003 | San Diego, California, United States

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