A new detector technology was developed, particularly suitable for low-cost radioactivity monitoring in radwaste storage sites. It consists of a scintillating optical fiber coupled at each end to a silicon photomultiplier (SiPM). The single-photon sensitivity of the SiPM, along with the left-right coincidence constraint, allows the achievement of a reasonable sensitivity to gamma radiation even though a thin 1-mm-diameter plastic scintillating fiber is used. Simulation results are in perfect agreement with the measured behavior, and several implementations are under way. The possibility of choosing the fiber length and shape makes them very flexible both conceptually and mechanically. Any improvement in the SiPM development technology reflects immediately into an improvement in the detector performance.
A new detector technology was developed, particularly suitable for low-cost radioactivity monitoring in radwaste storage
sites. It consists of a scintillating optical fiber coupled at each end to a silicon photomultiplier (SiPM). The single photon
sensitivity of the SiPM, along with the left-right coincidence constraint, allows to achieve a reasonable sensitivity to
gamma radiation even though using a thin 1mm diameter plastic scintillating fiber. Simulation results are in perfect
agreement with the measured behavior, and several implementations are under way. The possibility of choosing the fiber
length and shape makes them very flexible both conceptually and mechanically. Any improvement in the SiPM
development technology reflects immediately into an improvement in the detector performance.
In this contribution we present the results of the first morphological and electro-optical characterization of Silicon
Photomultipliers (SiPM) for nuclear medical imaging applications fabricated in standard silicon planar technology at the
STMicroelectronics Catania R&D clean room facility. We have improved our previous Geiger Mode Avalanche
Photodiodes (GMAP) technology in order to realize a photodetector with relevant features in terms of single-photoelectron
resolution, timing and photon detection efficiency. The performances of our devices, investigated in
several experimental conditions and here reported make ST-SiPM suitable in many applications like for example PET
(Positron Emission Tomography).
Design and characterization of a new generation of single photon avalanche diodes (SPAD) array, manufactured by STMicroelectronics
in Catania, Italy, are presented. Device performances, investigated in several experimental conditions
and here reported, demonstrate their suitability in many applications. SPADs are thin p-n junctions operating above the
breakdown condition in Geiger mode at low voltage. In this regime a single charged carrier injected into the depleted
layer can trigger a self-sustaining avalanche, originating a detectable signal. Dark counting rate at room temperature is
down to 10 s-1 for devices with an active area of 10 μm in diameter, and 103 s-1 for those of 50 &mgr;m. SPAD quantum
efficiency, measured in the range 350÷1050 nm, can be comparable to that of a typical silicon based detector and reaches
the values of about 50% at 550 nm for bigger samples. Finally, the low production costs and the possibility of integrating
are other favorable features in sight of highly dense integrated 1-D or 2-D arrays.
New single photon avalanche detectors (SPAD), are presented. Device performances, as photo-detection efficiency, timing and dark counts, extracted in several experimental conditions and here reported, make them suitable in many applications. The integration possibility, in order to achieve a new concept of solid state photomultiplier, has been also successfully investigated within the 5x5 arrays manufacture.
SINPHOS is a monolithic micro-device, able to measure simultaneously time distribution and spectrum of photons coming from a weak source like Delayed Luminescence of biological systems. In order to achieve this challenging goal, we use: Deep Lithography with Ions (DLI) and microelectronic technologies for the fabrication of dedicated passive micro-optical elements and for the realization of Single Photon Avalanche Diode (SPAD) detectors, respectively
The strength of today's deep lithographic micro-machining
technologies is their ability to fabricate monolithic
building-blocks including optical and mechanical functionalities
that can be precisely integrated in more complex photonic systems.
In this contribution we present the physical aspects of Deep
Lithography with ion Particles (DLP). We investigate the impact of
the ion mass, energy and fluence on the developed surface profile
to find the optimized irradiation conditions for different types
of high aspect ratio micro-optical structures. To this aim, we
develop a software program that combines the atomic interaction
effects with the macroscopic beam specifications. We illustrate
the correctness of our simulations with experimental data that we
obtained in a collaboration established between the accelerator
facilities at TUM, LNS and VUB. Finally, we review our findings
and discuss the strengths and weaknesses of DLP with respect to
Deep Lithography with X-rays (LIGA).
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