The effect of growth temperature on InAs QDs grown by metal-organic chemical vapor deposition (MOCVD) was
investigated in detail. Growth temperature affects InAs QDs in three ways, including the reconstruction mode of new
InAs crystal faces, the migration length of adatoms, band gaps of InAs QDs, and the interaction among three aspects was
studied. The variation of density, size and wavelength was experimentally demonstrated. The high density of
5.2×1010cm-2 was obtained. The room temperature wavelength of InAs/GaAs QDs using GaAs as capping layer reached
1240nm.
We have fabricated strain-reduced InAs quantum dots (QDs) by boron incorporation grown on GaAs(100) substrate. The
size of uncapped InAs QDs was increased with boron incorporation. The effect of boron on the PL spectra of InAs QDs
capped by an InGaAs strain-reducing layer wasn't obvious. However, when boron atoms were incorporated in InAs QDs
capped by a GaAs overgrown layer, the PL intensity was strongly enhanced, and the PL peak shifted towards a longer
wavelength. It was found that the incorporation of boron atoms within the InAs QDs could drastically reduce the In/Ga
intermixing effects during capping coverage.
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