Dr. Pierre Sixt Profile

Dr. Pierre Sixt

Lithography Coordinator at MINATEC

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Publications (13)

Proceedings Article | 14 March 2023 Poster + Paper

Optimized design and manufacturing process of diffuse micro corner cubes for head up projection display applications

Christophe Martinez, Jean-Marie Quemper, Yann Lee, Pierre Sixt

Proceedings Volume 12443, 124430I (2023) https://doi.org/10.1117/12.2649947

KEYWORDS: Retroreflectors, Retroreflector prisms, Augmented reality, Automotive front vision, Heads up displays, Diffusers, Deep reactive ion etching, Projection systems

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SPIE Journal Paper | 8 October 2014

Segmented subwavelength silicon gratings manufactured by high productivity microelectronic technologies for linear to radial/azimuthal polarization conversion

Thomas Kämpfe, Pierre Sixt, Denis Renaud, Armelle Lagrange, Fabrice Perrin, Olivier Parriaux

OE, Vol. 53, Issue 10, 107105, (October 2014) https://doi.org/10.1117/12.10.1117/1.OE.53.10.107105

KEYWORDS: Polarization, Silicon, Microelectronics, Semiconducting wafers, Photomasks, Transformers, Prototyping, Manufacturing, Chemical elements, Amorphous silicon

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Proceedings Article | 2 May 2014 Paper

Linear to radial/azimuthal polarization converter in transmission using form birefringence in a segmented silicon grating manufactured by high productivity microelectronic technologies

T. Kaempfe, P. Sixt, D. Renaud, A. Lagrange, F. Perrin, O. Parriaux

Proceedings Volume 9130, 91300W (2014) https://doi.org/10.1117/12.2052156

KEYWORDS: Polarization, Silicon, Photomasks, Semiconducting wafers, Microelectronics, Transformers, Amorphous silicon, Prototyping, Chromium, Manufacturing

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Proceedings Article | 21 June 2006 Paper

Manufacturability and printability of AAPSM with transparent etch stop layer

Michael Cangemi, Vicky Philipsen, Rudi De Ruyter, Leonardus Leunissen, Nicolo Morgana, Pierre Sixt, Marc Cangemi, Rand Cottle, Bryan Kasprowicz

Proceedings Volume 6281, 62810T (2006) https://doi.org/10.1117/12.692803

KEYWORDS: Etching, Quartz, Photomasks, Semiconducting wafers, Polarization, Manufacturing, Chromium, Reticles, Lithography, Phase shifts

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Phase-shift mask (PSM) technology in combination with 193nm illumination remains a viable option for high contrast imaging towards 45nm half-pitch applications. The advent of hyper NA (immersion) lithography increases the imaging sensitivity towards the photomask properties, such as mask-induced polarization. In addition, the use of PSM technology implies taking into account the inherent photomask topography effects for a balanced through pitch imaging. A good quartz etch depth control of +/-1^o through pitch is required for optimized wafer imaging [1]. Therefore, a new PSM material stack was proposed based on a transparent etch stop layer (TESL) in order to meet the stringent phase depth requirements beyond 65nm half-pitch [2]. This extra layer allows over-etching of the quartz, resulting in a good etch depth linearity and uniformity. This study examines the manufacturability and printability of TESL-based masks. We examine the effect of an improved quartz etch depth linearity on the through-pitch process windows for a TESL-based alternating aperture (AA)PSM. Moreover, due to the different stack of photomask material compared to a classical photomask blank, the impact on printability is investigated by simulations, AIMS and wafer imaging. The image imbalance compensation by trench biasing needs to be optimized for through-pitch process windows. The actual depth and line width of the structures is systematically probed within the photomask field. Based on photomask metrology data, rigorous electro-magnetic field simulations are compared to wafer prints, obtained on an ASML XT1250Di ArF immersion scanner working with a 0.85NA projection lens and to AIMS results from Zeiss AIMS fab 193i. Furthermore, feature sizes on the order of the lithography wavelength induce photomask polarization effects in the imaging path [3]. The degree of polarization is compared to the polarization behavior of a conventional PSM. In summary, this study assesses the capability of TESL PSM towards the 65nm node through-pitch imaging.

Proceedings Article | 15 March 2006 Paper

Optical properties and process impacts of high transmission EAPSM

Young Mog Ham, Nicolo Morgana, Pierre Sixt, Mike Cangemi, Bryan Kasprowicz, Chris Progler, Pat Martin

Proceedings Volume 6154, 615413 (2006) https://doi.org/10.1117/12.659238

KEYWORDS: Photomasks, Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Lithography, Chromium, Polarization, Image processing, SRAF, Resolution enhancement technologies

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Proceedings Article | 9 November 2005 Paper

A films based approach to intensity imbalance correction for 65nm node c:PSM

Rand Cottle, Pierre Sixt, Matt Lassiter, Marc Cangemi, Patrick Martin, Chris Progler

Proceedings Volume 5992, 59920J (2005) https://doi.org/10.1117/12.632214

KEYWORDS: Etching, Photomasks, Reticles, Manufacturing, Wet etching, Silica, Lithography, Resolution enhancement technologies, Scattering, Chromium

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Proceedings Article | 5 November 2005 Paper

Evaluation of transparent etch stop layer phase shift mask patterning and comparison with the single trench undercut approach

Y. Rody, P. Martin, C. Couderc, P. Sixt, C. Gardin, K. Lucas, K. Patterson, C. Miramond-Collet, J. Belledent, R. Boone, A. Borjon, Y. Trouiller

Proceedings Volume 5992, 59920R (2005) https://doi.org/10.1117/12.632561

KEYWORDS: Etching, Optical lithography, Photomasks, Quartz, Phase shifts, Printing, Electroluminescence, Manufacturing, Chromium, Optical proximity correction

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Despite the complexity of AAPSM patterning using the complementary PSM approach with respect to OPC correction, mask making, fab logistics etc, the technique still remains a valuable solution for special products where a low CD dispersion printing process is required. For current and next generation process technologies (90-65nm ground rules), the most common alternating mask solution of single trench etch with or without undercut becomes more difficult to manufacture. Especially challenging is the aspect ratio control of quartz etched trenches as a function of density in order to assure the correct phase angle and sidewall for dense and isolated structures over all phase shifted geometries. In order to solve this problem, a modified mask architecture is proposed, called the Transparent Etch Stop Layer (TESL) phase shift mask. In TESL, a transparent (etch stop) layer is deposited on the quartz substrate, followed by the deposition of a quartz layer having a thickness corresponding to the required phase angle for the used wavelength. On top a Chromium layer will be deposited. The patterning of this mask will be quite similar to the single trench variant. The difference is, that now an overetch can be applied for the phase definition resulting from the high etch selectivity of quartz to the etch stop material. The result of this approach should be that we can better control the phase depth and sidewall angle for dense and isolated structures. In this paper we will discuss the results of the printing tests performed using TESL masks especially with respect to litho process window, and we will compare these with the single trench undercut approach. Simulation results are presented with respect to shifter sidewall profile and TESL thickness in order to optimize image imbalance. Throughout the study we will correlate simulations and measurements to the after-MBOPC CD values for the shifter structures. These results will allow us to determine if the TESL AAPSM approach can be a more effective alternative to the single trench undercut approach.

Proceedings Article | 6 December 2004 Paper

Closing the defect printability loop: optimizing defect specifications for an established lithographic process

Kyle Patterson, Clare Wakefield, Pierre Sixt, Frank Sundermann, Yorick Trouiller, Jerome Belledent, Christophe Couderc, Yves Rody, Kevin Lucas

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569257

KEYWORDS: Semiconducting wafers, Metrology, Reticles, Lithography, Feature extraction, Optical proximity correction, Photomasks, Photoresist processing, Calibration, Array processing

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Proceedings Article | 3 May 2004 Paper

Impact of lithography variability on statistical timing behavior

Christopher Progler, Amir Borna, David Blaauw, Pierre Sixt

Proceedings Volume 5379, (2004) https://doi.org/10.1117/12.537259

KEYWORDS: Lithography, Critical dimension metrology, Monte Carlo methods, Error analysis, Optical proximity correction, Photomasks, Statistical analysis, Tolerancing, Manufacturing, Device simulation

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Proceedings Article | 25 June 1999 Paper

Production data from a Leica ZBA31H+ shaped e-beam mask writer located at the Photronics facility, Manchester, England

Stephen Johnson, Dominic Loughran, Peter Osborne, Pierre Sixt, Hans-Joachim Doering

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351124

KEYWORDS: Process control, Optical proximity correction, Photomasks, Raster graphics, Beam shaping, Reticles, Critical dimension metrology, Opacity, Lithography, Etching

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Proceedings Article | 24 September 1997 Paper

Performance of interferometric rotation encoders using diffraction gratings

Guy Voirin, Ulrich Benner, Francis Clube, Yves Darbellay, Olivier Parriaux, S. Schneider, Pierre Sixt

Proceedings Volume 3099, (1997) https://doi.org/10.1117/12.281223

KEYWORDS: Computer programming, Diffraction gratings, Head, Signal detection, Sensors, Diffraction, Interferometry, Prototyping, Silica, Beam splitters

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Proceedings Article | 30 September 1996 Paper

Experimental study of digitalized dual-frequency coupling gratings

Yan Li, Mai Xu, Guy Voirin, Pierre Sixt, Olivier Parriaux

Proceedings Volume 2891, (1996) https://doi.org/10.1117/12.253196

KEYWORDS: Waveguides, Free space, Phase shifts, Analog electronics, Sensors, Prisms, Waveguide modes, Spatial frequencies, Fabrication, Diffraction gratings

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SPIE Journal Paper | 1 September 1995

Spatial-frequency bandwidth in the photolithographic transfer of submicron gratings

Olivier Parriaux, Henry Vuilliomenet, Pierre Sixt, Nathalie Cuny

OE, Vol. 34, Issue 09, (September 1995) https://doi.org/10.1117/12.10.1117/12.200610

KEYWORDS: Spatial frequencies, Photomasks, Scanning electron microscopy, Chromium, Helium cadmium lasers, Glasses, Mercury, Lamps, Modulation, Mirrors

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Showing 5 of 13 publications

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