Dr. Pieter Vanelderen Profile

Dr. Pieter Vanelderen

at imec

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Author

Publications (11)

Proceedings Article | 12 November 2024 Presentation + Paper

Substantial dose reduction using dry deposited underlayer for EUV lithography while maintaining roughness and minimizing defects

Achintya Kundu, Mihir Gupta, Danilo De Simone, Pieter Vanelderen, Hyo Seon Suh, David De Roest, Dennis Christy, Fatemeh Davodi, Kishan Patel, Steaphan Wallace, Yiting Sun, Yoann Tomczak

Proceedings Volume 13215, 132150M (2024) https://doi.org/10.1117/12.3034575

KEYWORDS: Extreme ultraviolet lithography, Film thickness, Bubbles, Molecular bridges, Line width roughness, Bridges, Silica, Adhesion, Metal oxides, Extreme ultraviolet

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Proceedings Article | 22 February 2021 Presentation

Introduction to imec's AttoLab for ultrafast kinetics of EUV exposure processes and ultra-small pitch lithography

Fabian Holzmeier, Kevin Dorney, Esben Larsen, Thomas Nuytten, Dhirendra Singh, Michiel van Setten, Pieter Vanelderen, Clayton Bargsten, Seth Cousin, Daisy Raymondson, Eric Rinard, Rod Ward, Henry Kapteyn, Stefan Böttcher, Oleksiy Dyachenko, Raimund Kremzow, Marko Wietstruk, Geoffrey Pourtois, Paul van der Heide, John Petersen

Proceedings Volume 11610, 1161010 (2021) https://doi.org/10.1117/12.2595038

KEYWORDS: Lithography, Extreme ultraviolet lithography, Ultrafast phenomena, Photoemission spectroscopy, Coherence imaging, Semiconducting wafers, Radiometry, Extreme ultraviolet, Time resolved spectroscopy, Spectroscopy

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Proceedings Article | 5 May 2020 Paper

Defect improvement for an EUV process

Masahiko Harumoto, Harold Stokes, Shu Hao Chang, Moeen Ghafoor, Brian Cardineau, Jason Stowers, Michael Kocsis, Stephen Meyers, Pieter Vanelderen, Saika Muntaha Bari

Proceedings Volume 11323, 1132322 (2020) https://doi.org/10.1117/12.2552918

KEYWORDS: Extreme ultraviolet, Photoresist materials, Scanning electron microscopy, Metals, Photoresist processing, Semiconducting wafers, Extreme ultraviolet lithography, Line width roughness, Manufacturing, System on a chip

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Proceedings Article | 23 March 2020 Presentation + Paper

Underlayer optimization method for EUV lithography

Pieter Vanelderen, Nadia Vandenbroeck, Yichen Liang, Veerle Van Driessche, Douglas Guerrero, Andrea Chacko, Danilo De Simone, Geert Vandenberghe

Proceedings Volume 11326, 1132615 (2020) https://doi.org/10.1117/12.2551684

KEYWORDS: Photoresist materials, Extreme ultraviolet lithography, Lithography, Stochastic processes, Line width roughness, Extreme ultraviolet, Optical lithography, Photoresist developing

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Proceedings Article | 26 March 2019 Presentation + Paper

Impact of sequential infiltration synthesis (SIS) on roughness and stochastic nano-failures for EUVL patterning

Pieter Vanelderen, Victor Blanco, Ming Mao, Yoann Tomczak, David de Roest, Nicola Kissoon, Paulina Rincon Delgadillo, Gijsbert Rispens, Guido Schiffelers, Abhinav Pathak, Frederic Lazzarino, Danilo De Simone, Etienne de Poortere, Moyra Mc Manus, Daniele Piumi, Eric Hendrickx, Geert Vandenberghe

Proceedings Volume 10957, 109570S (2019) https://doi.org/10.1117/12.2515503

KEYWORDS: Etching, Lithography, Extreme ultraviolet lithography, Photoresist materials, Logic, Optical lithography

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Proceedings Article | 26 March 2019 Presentation + Paper

LCDU optimization of STT-MRAM 50nm pitch MTJ pillars for process window improvement

Murat Pak, Davide Crotti, Farrukh Yasin, Monique Ercken, Sandip Halder, Danilo De Simone, Pieter Vanelderen, Laurent Souriau, Hubert Hody, Gouri Sankar Kar

Proceedings Volume 10957, 109570R (2019) https://doi.org/10.1117/12.2515023

KEYWORDS: Etching, Optical lithography, Semiconducting wafers, Critical dimension metrology, Resistance, Magnetism, Photoresist processing, Manufacturing, Printing, Extreme ultraviolet lithography

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Proceedings Article | 26 March 2019 Presentation + Paper

Staggered pillar patterning using 0.33NA EUV lithography

Danilo De Simone, Romuald Blanc, Jeroen Van de Kerkhove, Amir-Hossein Tamaddon, Roberto Fallica, Lieve Van Look, Nouredine Rassoul, Frederic Lazzarino, Nadia Vandenbroeck, Pieter Vanelderen, Gian Lorusso, Frieda Van Roey, Anne-Laure Charley, Geert Vandenberghe, Kurt Ronse, Kilyoung Lee, Junghyung Lee, Sarohan Park, Chang-Moon Lim, Chan-Ha Park

Proceedings Volume 10957, 109570T (2019) https://doi.org/10.1117/12.2515170

KEYWORDS: Optical lithography, Extreme ultraviolet lithography, Semiconducting wafers, Etching, Extreme ultraviolet, Critical dimension metrology, Image processing, Failure analysis, Scanning electron microscopy, Image analysis

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Proceedings Article | 3 October 2018 Presentation + Paper

State-of-the-art of EUV materials for N5 logic and DRAM applications

Danilo De Simone, Yannick Vesters, Pieter Venelderen, Xue Ran, Ivan Pollentier, Geert Vandenberghe

Proceedings Volume 10809, 108090U (2018) https://doi.org/10.1117/12.2502915

KEYWORDS: Extreme ultraviolet lithography, Line edge roughness, Line width roughness, Logic, Nanoimprint lithography, Optical lithography, Metals, System on a chip, Fourier transforms, Extreme ultraviolet

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Proceedings Article | 19 March 2018 Presentation + Paper

Unraveling the role of photons and electrons upon their chemical interaction with photoresist during EUV exposure

Ivan Pollentier, Yannick Vesters, John Petersen, Pieter Vanelderen, Ashish Rathore, Danilo de Simone, Geert Vandenberghe

Proceedings Volume 10586, 105860C (2018) https://doi.org/10.1117/12.2299593

KEYWORDS: Polymers, Electrons, Extreme ultraviolet lithography, Photons, Extreme ultraviolet, Chemistry, Polymerization, Chemical analysis, Photoresist materials, Chemical reactions

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The interaction of 91.6 eV EUV photons with photoresist – in particular chemically amplified resist (CAR) – is different than exposure at 193 nm and 248 nm wavelengths. The latter is understood well and it is known that photons interact with electrons in the resist’s molecular valence orbitals (for chemically amplified resist (CAR) the photon interacts with the photo acid generator (PAG), which leads to a deprotection reaction on a polymer after a thermal catalytic reaction during a post-exposure-bake.). At EUV however, more steps are involved in the radiolysis process between the absorption of the photon and the final chemical modification. These are related to the generation of primary electrons and their decay to lower energy secondary electrons, and most of this steps are not well understood. In this paper, the reaction products from EUV and low energy electron exposure are examined using Residual Gas Analysis (RGA), which measures and analyzes the outgassing products related to the ongoing reactions. This investigation is applied firstly on a model CAR where details of the resist chemical constituents were known prior to testing. The measurement not only resolved information on the expected acid related reactions from the PAG and protection groups, but also exhibited direct scission reactions of the polymer, where some of them lead to polymerization reactions. Moreover, the measurement quantifies the balance between the different ongoing reactions, which were confirmed by contrast curve measurements. Based on learnings on the model resist, applied the measurement technique to commercial resists, where actual resist chemistry composition is not known. Despite that, it was found that information could be deduced to distinguish between acid related ongoing reactions and direct scission of reaction on the base polymer and quantify their relation. Moreover, different generations of commercial resists based on similar chemistry platform were investigated, which revealed that improvements in printing performance could be explained by PAG reaction yield increase.

Proceedings Article | 16 October 2017 Presentation + Paper

Unraveling the role of secondary electrons upon their interaction with photoresist during EUV exposure

Ivan Pollentier, Yannick Vesters, Jing Jiang, Pieter Vanelderen, Danilo de Simone

Proceedings Volume 10450, 104500H (2017) https://doi.org/10.1117/12.2281449

KEYWORDS: Electrons, Polymers, Extreme ultraviolet lithography, Photoresist materials, Chemical analysis, Photons, Chemical reactions, Extreme ultraviolet, Deep ultraviolet, Lithography

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Proceedings Article | 7 April 2017 Presentation + Paper

High-volume manufacturing compatible dry development rinse process (DDRP): patterning and defectivity performance for EUVL

Safak Sayan, Pieter Vanelderen, Iulian Hetel, BT Chan, Praveen Raghavan, Victor Blanco, Philippe Foubert, Lucia D'urzo, Danilo De Simone, Geert Vandenberghe

Proceedings Volume 10143, 101430U (2017) https://doi.org/10.1117/12.2261741

KEYWORDS: Photoresist materials, Extreme ultraviolet lithography, Photoresist developing, Optical lithography, Extreme ultraviolet, High volume manufacturing, Resolution enhancement technologies, Photomasks, Photoresist processing, Semiconducting wafers, Etching

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Showing 5 of 11 publications

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