This paper describes a method for automatically inspecting the top edge region of a wafer for defects and how this method was used to evaluate process improvements. The need for such an inspection was driven by a within wafer defect problem first seen on product. The root cause of the defect was found to be the redistribution of certain defect types from the wafer edge exclusion region into the product area. Process partition and manual inspection using a scanning electron microscope (SEM) revealed the mechanism to be the formation and rupture of blisters during part of the process sequence. These blisters were found to be as small as 2μm, and appeared along the top edge of wafers. During processing, a high percentage of these blisters would rupture and redeposit debris on the topside of the wafer resulting in nearly 100 percent kill rate. While the root cause was understood, the use of SEM inspection to quantifiably evaluate process improvements intended to reduce the edge defects was impractical. This was deemed impractical because of the large of the number of wafers required to generate meaningful statistics and the number of process options. Additionally, manual inspections used to count the number of defects were inconsistent as well as slow. An automated macro defect inspection system (August Technology AXi Series 930) was used in a novel way to enable fast, accurate, and repeatable defect counts from the wafer top edge to help determine the most appropriate process improvement.
Defect inspection metrology is an integral part of the yield ramp and process monitoring phases of semiconductor manufacturing. High aspect ratio structures have been identified in the ITRS as critical structures where there are no known manufacturable solutions for defect detection. We present case studies of a new inspection technology based on digital holography that addresses this need. Digital holography records the amplitude and phase of the wavefront from the target object directly to a single image acquired by a CCD camera. Using deep ultraviolet laser illumination, digital holography is capable of resolving phase differences corresponding to height differences as small as several nanometers. Thus, the technology is well suited to the task of finding defects on semiconductor wafers. We present a study of several defect detection benchmark wafers, and compare the results of digital holographic inspection to other wafer inspection technologies. Specifically, digital holography allows improved defect detection on high aspect ratio features, such as improperly etched contacts. In addition, the phase information provided by digital holography allows us to visualize the topology of defects, and even generate three-dimensional images of the wafer surface comparable to scanning electron microscope (SEM) images. These results demonstrate the unique defect detection capabilities of digital holography.
C. Thomas, Tracy Bahm, Larry Baylor, Philip Bingham, Steven Burns, Matt Chidley, Long Dai, Robert Delahanty, Christopher Doti, Ayman El-Khashab, Robert Fisher, Judd Gilbert, James Goddard, Gregory Hanson, Joel Hickson, Martin Hunt, Kathy Hylton, George John, Michael Jones, Ken Macdonald, Michael Mayo, Ian McMackin, Dave Patek, John Price, David Rasmussen, Louis Schaefer, Thomas Scheidt, Mark Schulze, Philip Schumaker, Bichuan Shen, Randall Smith, Allen Su, Kenneth Tobin, William Usry, Edgar Voelkl, Karsten Weber, Paul Jones, Robert Owen
KEYWORDS: Holograms, Digital holography, Holography, Semiconducting wafers, Cameras, Deep ultraviolet, Spatial frequencies, Beam splitters, Digital video recorders, Fourier transforms
A method for recording true holograms directly to a digital video medium in a single image has been invented. This technology makes the amplitude and phase for every pixel of the target object wave available. Since phase is proportional wavelength, this makes high-resolution metrology an implicit part of the holographic recording. Measurements of phase can be made to one hundredth or even one thousandth of a wavelength, so the technology is attractive for dining defects on semiconductor wafers, where feature sizes are now smaller than the wavelength of even deep UV light.
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