EO/IR Nanosensors are being developed for a variety of Defense and Commercial Systems
Applications. These include UV, Visible, NIR, MWIR and LWIR Nanotechnology based
Sensors. The conventional SWIR Sensors use InGaAs based IR Focal Plane Array (FPA) that
operate in 1.0-1.8 micron region. Similarly, MWIR Sensors use InSb or HgCdTe based FPA that
is sensitive in 3-5 micron region. More recently, there is effort underway to evaluate low cost
SiGe visible and near infrared band that covers from 0.4 to 1.6 micron and beyond to 1.8 microns.
One of the critical technologies that will enhance the EO/IR sensor performance is the
development of high quality nanostructure based antireflection coating. In this paper, we will
discuss our modeling approach and experimental results for using oblique angle nanowires
growth technique for extending the application for UV, Visible and NIR sensors and their utility
for longer wavelength application.
The AR coating is designed by using a genetic algorithm and fabricated by using oblique angle
deposition. The AR coating is designed for the wavelength range of 250 nm to 2500 nm and 0° to
40° angle of incidence. These nanostructure AR coatings have shown to enhance the optical
transmission in the band of interest and minimize the reflection loss to less than 3 percent
substantial improvement from the thin film AR coatings technology.
High resolution imaging in the UV band has a lot of applications in Defense and Commercial
Applications. The shortest wavelength is desired for spatial resolution which allows for small pixels and
large formats. UVAPD's have been demonstrated as discrete devices demonstrating gain. The next frontier is
to develop UV APD arrays with high gain to demonstrate high resolution imaging. We also disuses our recent
efforts on development of APD's using MOCVD of GaN/ AlGaN.
We present an analytical model that can predict sensor performance in the UV band using p-i-n or
APD detectors with and without gain and other detector and sensor parameters for a desired UV band of
interest. SNR's can be modeled from illuminated targets at various distances with high resolution under
standard MODTRAN atmospheres in the UV band using detector arrays with unity gain and with high gain
APD along with continuous or pulsed UV lasers.
SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that
will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take
advantage of silicon based technology that promises small feature size, low dark current and compatibility with the
low power silicon CMOS circuits for signal processing. This paper discusses performance characteristics for the
SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and
compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We present results on the approach and device
design for reducing the dark current in SiGe detector arrays. The electrical and optical properties of SiGe arrays at
room temperature are discussed. We also discuss future integration path for SiGe devices with Si-MEMS
Bolometers.
EO/IR Nanosensors are being developed for a variety of Defense and Commercial Systems
Applications. These include UV, Visible, NIR, MWIR and LWIR Nanotechnology based
Sensors. The conventional SWIR Sensors use InGaAs based IR Focal Plane Array (FPA) that
operate in 1.0-1.8 micron region. Similarly, MWIR Sensors use InSb or HgCdTe based FPA that
is sensitive in 3-5 micron region. More recently, there is effort underway to evaluate low cost
SiGe visible and near infrared band that covers from 0.4 to 1.6 micron.
One of the critical technologies that will enhance the EO/IR sensor performance is the
development of high quality nanostructure based antireflection coating. Prof. Fred Schubert and
his group have used the TiO2 and SiO2 graded-index nanowires / nanorods deposited by obliqueangle
deposition, and, for the first time, demonstrated their potential for antireflection coatings by
virtually eliminating Fresnel reflection from an AlN-air interface over the UV band. This was
achieved by controlling the refractive index of the TiO2 and SiO2 nanorod layers, down to a
minimum value of n = 1.05, the lowest value so far reported
In this paper, we will discuss our modeling approach and experimental results for using oblique
angle nanowires growth technique for extending the application for UV, Visible and NIR sensors
and their utility for longer wavelength application. The AR coating is designed by using a genetic
algorithm and fabricated by using oblique angle deposition. The AR coating is designed for the
wavelength range of 400 nm to 2500 nm and 0° to 40° angle of incidence. The measured average
optical transmittance of an uncoated glass substrate between 1000 nm and 2000 nm is improved
from 92.6% to 99.3% at normal incidence by using a two-layer nanostructured AR coating
deposited on both surfaces of the glass substrate.
SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane
arrays that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal
plane arrays take advantage of silicon based technology that promises small feature size, low dark current
and compatibility with the low power silicon CMOS circuits for signal processing. This paper will discuss
performance characteristics for the SiGe based VIS-NIR Sensors for a variety of defense and commercial
applications using small unit cell size and compare performance with InGaAs, InSb, and HgCdTe
IRFPA's. We will present results on the approach and device design for reducing the dark current in SiGe
detector arrays. We will discuss electrical and optical properties of SiGe arrays at room temperature and
as a function of temperature. We will also discuss future integration path for SiGe devices with other
Silicon-based technology for defense and Commercial Applications.
High resolution imaging in the UV band has a lot of applications in Defense and Commercial
Applications. The shortest wavelength is desired for spatial resolution which allows for small pixels and
large formats. UVAPD's have been demonstrated as discrete devices demonstrating gain. The next frontier is
to develop UV APD arrays with high gain to demonstrate high resolution imaging. We also disuses our recent
efforts on development of APD's using MOCVD of GaN/ AlGaN.
We present an analytical model that can predict sensor performance in the UV band using p-i-n or
APD detectors with and without gain and other detector and sensor parameters for a desired UV band of
interest. SNR's can be modeled from illuminated targets at various distances with high resolution under
standard MODTRAN atmospheres in the UV band using detector arrays with unity gain and with high gain
APD along with continuous or pulsed UV lasers.
SiGe based focal plane arrays offer a low cost alternative for developing visible- near-infrared focal plane arrays that
will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based foal plane arrays take
advantage of silicon based technology that promises small feature size, low dark current and compatibility with the
low power silicon CMOS circuits for signal processing. This paper will discuss performance characteristics for the
SiGe based VIS-NIR Sensors for a variety of defense and commercial applications using small unit cell size and
compare performance with InGaAs, InSb, and HgCdTe IRFPA's. We will present results on the approach and
device design for reducing the dark current in SiGe detector arrays. We will discuss electrical and optical properties
of SiGe arrays at room temperature and as a function of temperature. We will also discuss future integration path for
SiGe devices with Si-MEMS Bolometers.
High resolution imaging in UV band has a lot of applications in Defense and Commercial systems. The
shortest wavelength is desired for spatial resolution which allows for small pixels and large formats.
UVAPD's have been demonstrated as discrete devices demonstrating gain. The next frontier is to develop UV
APD arrays with high gain to demonstrate high resolution imaging.
We will discuss an analytical model that can predict sensor performance in the UV band using p-i-n or APD
detectors with and without gain and other detector and sensor parameters for a desired UV band of interest.
SNR's can be modeled from illuminated targets at various distances with high resolution under standard
MODTRAN atmospheres in the UV band and the solar blind region using detector arrays with unity gain
and with high gain APD along with continuous or pulsed UV lasers.
The performance can be determined by the signal level which results from the UV laser return energy (laser
power, beam divergence, target reflectance and atmospheric transmittance), the optics f/number, the response
of the detector (collection area, quantum efficiency, fill factor and gain), and the total noise which will be the
sum of the dark current noise, the scene noise, and the amplifier noise. We also discuss trades as a function
of detector response, dark current noise and the 1/f noise. We also present various approaches and device
designs that are being evaluated for developing APD's in wide band gap semiconductors. The paper also
discusses current state of the art in UV APD and the future directions for small unit cell size and gain in the
APD's.
SiGe based Focal Plane Arrays offer a low cost alternative for developing visible- NIR focal plane arrays
that will cover the spectral band from 0.4 to 1.6 microns. The attractive features of SiGe based IRFPA's
will take advantage of Silicon based technology, that promises small feature size, low dark current and
compatibility with the low power silicon CMOS circuits for signal processing. This paper discusses
performance comparison for the SiGe based VIS-NIR Sensor with performance characteristics of InGaAs,
InSb, and HgCdTe based IRFPA's.
Various approaches including device designs are discussed for reducing the dark current in SiGe detector
arrays; these include Superlattice, Quantum dot and Buried junction designs that have the potential of
reducing the dark current by several orders of magnitude. The paper also discusses approaches to reduce
the leakage current for small detector size and fabrication techniques. In addition several innovative
approaches that have the potential of increasing the spectral response to 1.8 microns and beyond.
KEYWORDS: 3D modeling, Sensors, Minimum resolvable temperature difference, Bolometers, Performance modeling, Atmospheric modeling, Modulation transfer functions, Image sensors, Signal to noise ratio, Thermal modeling
Presented is a comprehensive, physics-based model for microbolometer detector and sensor performance prediction. The
model combines equations found in the literature and various standard models that generate NETD, MRTD, 3-D noise
statistics and atmosphere characteristics (MODTRAN-based), with a comprehensive microbolometer model and HgCdTe
model developed by the author to provide an end-to-end detector/FPA/sensor analysis and design tool, as well as a
realistic image sequence generation tool. The model characterizes the individual pixel element based on the structure
used, the various layer thicknesses, the electrical and thermal characteristics of the bolometer material and the biasing
and readout circuit, and uses these results to calculate response and noise, NEP and NETD. The NETD, MTF and
MRTD are predicted from the optics, detector and readout. Predicted NETD has been compared and verified with values
found in literature, results from other models, and to uncooled camera measurements. The MRTD prediction has been
verified with camera measurements and with standard industry MRTD model outputs. The model also calculates
atmospheric path radiance and transmittance for horizontal paths based on MODTRAN outputs for the LWIR band at
altitudes from 0 to 10km and ranges from 1 to 50km for assessments of air-to-air engagement SNR's. The model in
matlab utililizes a 3-D noise model to provide accurate realistic imagery used to present realistic sensor images and to
further validate the NETD and MRTD routines.(1) Images at 30Hz and 60Hz have been generated for visual assessment
by the user and have mirrored industry model results and real-time camera images for MRTD's for the temporal noise
case. The model's 3-D noise generation feature allows the prediction of MRTD vs. frequency under any 3-D noise
combination. This model provides an end-to-end performance prediction tool useful in bolometer element design,
readout design and for system level trade studies.
KEYWORDS: Signal to noise ratio, Sensors, Germanium, Infrared sensors, Near infrared, Silicon, Diodes, Black bodies, Staring arrays, Indium gallium arsenide
Low cost IR Sensors are needed for a variety of Military and Commercial Applications. SiGe based IR Focal Plane Arrays offer a low cost alternative for developing near IR sensors that will not require cooling and can operate in the visible and NIR bands. The attractive features of SiGe based IRFPA's will take advantage of Silicon based technology, that promises small feature size and compatibility with the low power silicon CMOS circuits for signal processing.
A feasibility study of an infrared sensor based on SiGe material system and its performance characteristics are presented. Simulations comparing the sensitivity of the SiGe detector with spectral cutoff wavelength of 1.6 micron to other IR Focal Plane arrays are discussed. Measured electrical and optical characteristics of Ge-on-Si photodetectors are also presented.
This paper discusses the capabilities of a EO/IR sensor model developed to provide a robust means for comparative
assessments of infrared FPA's and sensors operating in the infrared spectral bands that coincide with the atmospheric
windows - SW1 (1.0-1.8&mgr;m), sMW (2-2.5&mgr;m), MW (3-5&mgr;m), and LW (8-12&mgr;m). The applications of interest include
thermal imaging, threat warning, missile interception, UAV surveillance, forest fire and agricultural crop health
assessments, and mine detection. As a true imaging model it also functions as an assessment tool for single-band and
multi-color imagery. The detector model characterizes InGaAs, InSb, HgCdTe, QWIP and microbolometer sensors for
spectral response, dark currents and noise. The model places the specified FPA into an optical system, evaluates system
performance (NEI, NETD, MRTD, and SNR) and creates two-point corrected imagery complete with 3-D noise image
effects. Analyses are possible for both passive and active laser illuminated scenes for simulated state-of-the-art IR
FPA's and Avalanche Photodiode Detector (APD) arrays. Simulated multispectral image comparisons expose various
scene components of interest which are illustrated using the imaging model. This model has been exercised here as a
predictive tool for the performance of state-of-the-art detector arrays in optical systems in the five spectral bands
(atmospheric windows) from the SW to the LW and as a potential testbed for prototype sensors. Results of the analysis
will be presented for various targets for each of the focal plane technologies for a variety of missions.
This paper reports on a model developed to predict bolometer performance in its environment, where the environment
consists of thermal, optical and electrical components. Two complementary methods were employed to predict
performance. The first solves the heat balance equation for the bolometer in its circuit and its thermal environment with
known values of heat capacitance, thermal conductance, absorptance, temperature coefficient of resistance and the userdefined
bias current (either constant or pulsed). This iteration yields a bolometer temperature rise, and a corresponding
change in resistance and voltage. This is the signal part of the equation. The second method is required to calculate the
total bolometer noise. It uses equations derived from the literature to predict bolometer noise, response, NEP and NETD
from first principles for the four types of noise generated in thermal detectors (thermal fluctuation noise, background
fluctuation noise, johnson noise and 1/f noise). Thermal conductance and heat capacities are calculated using all the
elements of the bolometer structure such as the silicon nitride structure, the VOx coating, and the nichrome electrical
leads. Using a calculation of the full spectral irradiance on the bolometer from the scene and the dewar and a userdefined
bolometer element spectral absorption, the model will accurately assess performance in any environment. The
model also employs a 3-D noise model and provides synthetic images of PSF-blurred bar targets for NETD and MRTD
predictions.
This model was developed to provide a means for comparative assessments of HgCdTe FPA's and sensors operating in
the infrared spectral bands that coincide with the atmospheric windows - (SW1(1.5-1.8μ), SW2(2-2.5μ), MW(3-5μ), and
LW(8-12μ). As a true imaging model it also functions as an assessment tool for single-band imagery and for multi-color
imagery. The HgCdTe model characterizes both n-on-p and p-on-n homojunctions and heterostructures. Diffusion and
depletion dark currents and RoA's are calculated for the three common configurations (mesa heterojunction, planar ionimplanted
or diffused junction, and the vertically integrated photodiode). The model places the specified FPA into an
optical system, evaluates system performance (NEI, NETD, MRTD, and SNR) and creates two-point corrected imagery
complete with 3D noise image effects. This model was exercised here as a predictive tool for performance of state-of-the-
art detector arrays in optical systems in the four spectral bands (atmospheric windows) from the SW to the MW (1.5-
1.8, 2.0-2.5, 3.4-4.2 and 4.5-5.0 um) which are the bands commonly considered for hot target and plume exhaust
detection. Results from the literature and model runs for various target and scene sets show promise for HgCdTe FPA's
and sensors developed for the 2-2.5 μm band for a variety of missions such as threat detection from UAV or satellite
platforms, perimeter defense, and high-altitude intercepts.
High Performance Radiation Hardened LWIR and Multicolor Focal Plane Arrays are critical for many space applications. Reliable focal plane arrays are needed for these applications that can operate in space environment without any degradation.
In this paper, we will present various LWIR and Multicolor Focal Plane architectures currently being evaluated for LWIR and Multicolor applications that include focal plane materials such as HgCdTe, PbSnTe, QWIP and other Superlattice device structures.
We also present AR Coating models and experimental results on several promising multi-layer AR coatings that includes CdTe, Si3N4 and diamond like Carbon, that have the necessary spectral response in the 2-25 microns and are hard materials with excellent bond strength. A combination of these materials offers the potential of developing anti-reflection coatings with high optical quality with controlled physical properties.
The demand continues to grow for small, compact imaging sensors, which include new capabilities, such as response in multiple spectral bands, increased sensitivity, wide high dynamic range, and operating at room temperature. These goals are dependant upon novel concepts in sensor technology, especially advanced electronic processing integrated with the sensor. On-focal plane processing is especially important to realize the full potential of the sensor. Since the area available for focal plane processing is extremely limited, a new paradigm in sensor electronic read-out technology is necessary to bridge the gap between multi-functional, high performance detector arrays and the off-focal plane processing. The Vertically Integrated Sensor Array (VISA) Program addresses this need through development of pixel-to-pixel interconnected silicon processors at the detector, thus expanding the area available for signal and image processing. The VISA Program addresses not only the array interconnection technology, but also investigates circuit development adapted to this new three-dimensional focal plane architecture. This paper reviews progress in the first phase of the program and outlines direction for demonstrations of vertically integrated sensor arrays.
The increasing need for unattended sensor networks drives individual sensor development, signal processing for network management, and communication technology. The application space is becoming more complex, with requirements for sensor networks in force protection; surveillance of large expanses of rugged terrain; and monitoring complex urban areas. Individual sensors exhibit excellent performance and include a wide variety of sensing modes, such as acoustic, electro-optical imaging, seismic, and radio frequency devices. These sensors continue to shrink with packaging, while applications continue to demand more of the sensor technology. Although single imaging arrays, which are available in spectral bands from the visible through the infrared, can be integrated into packages size as small as a cubic inch, the information from a single sensor is not sufficient to meet requirements for day/night, all-weather operation. This has driven the need for integration of multiple sensors into the compact packages intended for an individual sensor. A major step toward addressing the need for more effective sensor technology for unattended sensor networks is being taken through development of Vertically Integrated Sensor Array (VISA) technology. This technology, currently being developed for imaging sensors, builds multiple layers of signal processing at each pixel in the sensor array. Processing power is dramatically increased, allowing the integration of multiple sensors in small compact packages. This paper reviews the VISA approach to imaging sensors and describes applications for unattended sensors.
Multi-color infrared (IR) focal planes are required for high performance sensor applications. These sensors will require multi-color focal plane arrays (FPA) that will cover various wavelengths of interest in MWIR/LWIR and LWIR/VLWIR bands. There has been a significant progress in HgCdTe detector technology for multi-color MWIR/LWIR and LWIR/VLWIR focal plane arrays [1,2,3]. Two-color IR FPA eliminate the complexity of multiple single-color IR FPAs and provide a significant reduction of weight and power in a simpler, reliable and affordable systems.
The complexity of multicolor IR detector MWIR/LWIR makes the device optimization by trial and error not only impractical but also merely impossible. Too many different geometrical and physical variables need to be considered at the same time. Additionally material characteristics are only relatively controllable and depend on the process repeatability. In this context the ability of performing simulation experiments where only one or a few parameters are carefully controlled is paramount for a quantum improvement of a new generation of multicolor detectors for various applications.
Complex multi-color detector pixels cannot be designed and optimized by using a conventional 1D models. Several additional physical phenomena need to be taken into account. In designing a conventional photovoltaic IR detector array, a trade off exists on the choice of the pixel pitch, the pixel area and its height. The main goal of the device optimization is to reduce the pixel cross talk while keeping a high filling factor and detection efficiency. If the pixel height is made comparable to the lateral pixel dimension the contribution of the lateral photocurrent and lateral generation-recombination current becomes relevant and a full 2D simulation needs to be performed. It also important to point out that the few attempts to perform 2D simulations have reached the conclusion that for advanced IR arrays a full 3D approach should be used. The most challenging aspect of the array design and simulation is the pixel cross-talk effects. Since this is caused by the interaction with the four nearest neighboring pixels, even a description based on a 2D simulation model in most cases is not adequate. It is consequently important to include results from 3D simulation models as a guide to build lower dimensionality models.
Michael Jack, James Asbrock, C. Anderson, Steven Bailey, George Chapman, E. Gordon, P. Herning, Murray Kalisher, Kim Kosai, V. Liquori, Valerie Randall, Joseph Rosbeck, Sanghamitra Sen, P. Wetzel, Maurice Halmos, Patrick Trotta, Andrew Hunter, John Jensen, Terence de Lyon, W. Johnson, B. Walker, Ward Trussel, Andy Hutchinson, Raymond Balcerak
HgCdTe APDs and APD arrays offer unique advantages for high-performance eyesafe LADAR sensors. These include: operation at room temperature, low-excess noise, high gain, high-quantum efficiency at eyesafe wavelengths, GHz bandwidth, and high-packing density. The utility of these benefits for systems are being demonstrated for both linear and area array sensors. Raytheon has fabricated 32 element linear APD arrays utilizing liquid phase epitaxy (LPE), and packaged and integrating these arrays with low-noise amplifiers. Typical better APDs configured as 50-micron square pixels and fabricated utilizing RIE, have demonstrated high fill factors, low crosstalk, excellent uniformity, low dark currents, and noise equivalent power (NEP) from 1-2 nW. Two units have been delivered to NVESD, assembled with range extraction electronics, and integrated into the CELRAP laser radar system. Tests on these sensors in July and October 2000 have demonstrated excellent functionality, detection of 1-cm wires, and range imaging. Work is presently underway under DARPA's 3-D imaging Sensor Program to extend this excellent performance to area arrays. High-density arrays have been fabricated using LPE and molecular beam epitaxy (MBE). HgCdTe APD arrays have been made in 5 X 5, 10 X 10 and larger formats. Initial data shows excellent typical better APD performance with unmultiplied dark current < 10 nA; and NEP < 2.0 nW at a gain of 10.
Uncooled infrared cameras have made dramatic strides recently. Very low cost, lightweight, low power cameras have been built. Also low cost high performance uncooled cameras have been built. A discussion of this technology to make this happen and the resulting new applications will follow.
Maurice Halmos, Michael Jack, James Asbrock, C. Anderson, Steven Bailey, George Chapman, E. Gordon, P. Herning, Murray Kalisher, Louis Klaras, Kim Kosai, V. Liquori, Mike Pines, Valerie Randall, Robin Reeder, Joseph Rosbeck, Sanghamitra Sen, Patrick Trotta, P. Wetzel, Andrew Hunter, John Jensen, T. DeLyon, Charlie Trussell, James Hutchinson, Raymond Balcerak
Raytheon has recently been funded by DARPA to develop an FPA for single shot eyesafe ladar operation. The goal of the program is to develop new high speed imaging rays to rapidly acquire high resolution, 3D images of tactical targets at ranges as long as 7 to 10 kilometers. This would provide precision strike, target identification from rapidly moving platforms, such as air-to-ground seekers, which would enhance counter-counter measure performance and the ability to lock-on after launch. Also a goal is to demonstrate the acquisition of hidden, camouflaged and partially obscured targets. Raytheon's approach consists of using HgCdTe APD arrays which offer unique advantages for high performance eyesafe LADAR sensors. These include: eyesafe operation at room temperature, low excess noise, high gain to overcome thermal and preamp noise, Ghz bandwidth and high packing density. The detector array will be coupled with a Readout Integrated Circuit, that will capture all the information required for accurate range determination. The two components encompass a hybrid imaging array consisting of two IC circuit chips vertically integrated via an array of indium metal 'bumps'. The chip containing the PAD detector array and the silicon signal processing readout chip are independently optimized to provide the highest possible performance for each function.
Imaging sensor systems address a broad range of needs, in both the military and commercial sectors, and must meet a demanding set of requirements. The unattended imaging sensor application places particularly stressing demands on the technology. Unattended imaging sensors collect data from a broad field of regard, process the information, and transmit it to the observer or to other sensors for integration. The unattended sensor usually operates in a semi-autonomous mode, with a man-in-the-loop only as a check. The sensor must operate over an extended time period, with minimum power, and interpret a large amount of data. Changing environmental conditions impose a further set of requirements. High resolution, high contrast images during one period of the day may degrade significantly as conditions change in the evening, during fog and rain, and as the temperature fluctuates. This paper briefly discusses applications of unattended sensors and highlights recent sensor advances, in several spectral regions, contributing to the unattended sensor application.
The uncooled infrared cameras are now available for both the military and commercial markets. The current camera technology incorporates the fruits of many years of development, focusing on the details of pixel design, novel material processing, and low noise read-out electronics. The rapid insertion of cameras into systems is testimony to the successful completion of this 'first phase' of development. In the military market, the first uncooled infrared cameras will be used for weapon sights, driver's viewers and helmet mounted cameras. Major commercial applications include night driving, security, police and fire fighting, and thermography, primarily for preventive maintenance and process control. The technology for the next generation of cameras is even more demanding, but within reach. The paper outlines the technology program planned for the next generation of cameras, and the approaches to further enhance performance, even to the radiation limit of thermal detectors.
Uncooled IR sensor technology has accelerated rapidly in the past few years. Higher performance sensor, electronics integration, and enhanced signal processing are generating new applications and increasing production volume. Uncooled sensor are being considered to replace cooled sensor in some applications, but most importantly, the unique characteristics of the uncooled sensor spawn novel uses of the technology. Very small, lightweight and lower power sensor are possible with the uncooled IR. However, moderate levels of performance are expected even from the smallest sensors. This demand for performance stimulates new ideas for thermal detector structures operating at or near the theoretical limit. This paper reviews the exciting new applications of the uncooled technology and investigates the novel technical approaches necessary to bring about a new generation of uncooled IR sensor technology.
Night vision technology is present in most military systems used today. The sensors range from night vision goggles to high performance infrared ()targetacquisition and tracking systems. These sensors have provided a distinct battlefield advantage and will continue to be important in future confrontations and peace-keeping missions. With the importance placed upon night vision, lower cost and wider availability of night vision technology is an important consideration. Sensors can be employed in greater numbers as the cost is reduced and as the sensor package becomes lighter and consumes lower power. Sensor packaging, conformal to the system configuration, helps the sensor readily adapt to new system configurations. Infrared sensors that do not require cryogenic cooling meet many of these characteristics. Recently, the excellent imaging performance of uncooled IR focal plane arrays have captured the attention of many system users and initiated the emergence of new applications. This paper reviews these application areas, explores new possibilities, and assesses the technology underway to further expand the realm of uncooled IR imaging. Technology advances, both in the sensor technology and the interface with the imaging system, will expand uncooled JR technology into additional military and commercial systems.
Infrared sensors are generally considered a specialized product for military applications. With the reduction in the projected volume to be procured by the military, industry is actively pursuing new applications of IR sensors in security, surveillance, medical, and process control systems. With this expansion of the potential application base, rapid response to customer requirements and further cost reductions are essential to respond to the future marketplace. Initiatives to develop new detector and JR sensor technologies must maintain this new market perspective. This paper reviews market potential and describes technology initiatives necessary to produce a wide variety of JR sensors in low volume and at affordable cost. The initiatives address all aspects of the JR sensor module production, including the detector, packaging, cryogenics, and electronics. Since the sensor design is an integral part of the overall electro-optical system design, software tools linking sensor specifications to system requirements are also essential to the production of affordable sensors in small quantities. Utilization of this integrated sensor/system design trade space early in the design process provides the capability to make cost/performance tradeoffs that are useful in guiding the selection of detector configuration, packaging, and electronics. Integration of these design activities with factory process capabilities provides the potential for rapid production of new sensor designs at an affordable cost, even in low volume.
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