Dr. Reto Haering Profile

Dr. Reto Haering

SVP R&D at TOPTICA Photonics AG

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Publications (8)

Proceedings Article | 12 March 2024 Presentation + Paper

Femtosecond fiber delivery at 920 nm for two-photon microscopy

Konrad Birkmeier, Yik Long Li, Fabian Röser, Robert Herda, Laura Lohr, Luisa Hofmann, Bernhard Wolfring, Reto Häring, Florian Tauser

Proceedings Volume 12847, 1284703 (2024) https://doi.org/10.1117/12.3002446

KEYWORDS: Microscopes, Femtosecond phenomena, Two photon excitation microscopy, Fiber lasers, Femtosecond pulse shaping, Miniaturization, Lasers

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Proceedings Article | 12 March 2024 Presentation + Paper

High-power diode lasers for quantum technologies

Alexander Bachmann, Moritz v. Sivers, Christian Nölleke, Matthias Scholz, Dennis Krug, Björn Globisch, Reto Häring, Wilhelm Kaenders

Proceedings Volume 12867, 1286714 (2024) https://doi.org/10.1117/12.3008307

KEYWORDS: Quantum technologies, Semiconductor lasers, Laser frequency, Quantum systems, Laser applications, Quantum photonics, Quantum frequencies, Quantum computing

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Proceedings Article | 15 March 2023 Presentation + Paper

Transient interferometric scattering microscopy on nanoscale objects with high sensitivity

Konrad Birkmeier, Andreas Brodschelm, Florian Tauser, Reto Häring, Bernhard Wolfring, Achim Hartschuh

Proceedings Volume 12410, 1241009 (2023) https://doi.org/10.1117/12.2668432

KEYWORDS: Microscopy, Laser systems engineering, Fiber lasers, Relative intensity noise, Particles, Pulse signals, Modulation frequency, Laser scattering, Laser interferometry, Absorption

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Proceedings Article | 23 May 2011 Paper

Combining rigorous diffraction calculation and GPU accelerated nonsequential raytracing for high precision simulation of a linear grating spectrometer

Florian Mauch, David Fleischle, Wolfram Lyda, Wolfgang Osten, Torsten Krug, Reto Häring

Proceedings Volume 8083, 80830F (2011) https://doi.org/10.1117/12.889175

KEYWORDS: Spectroscopy, Diffraction gratings, Ray tracing, Stray light, Diffraction, Computer simulations, Light emitting diodes, Monte Carlo methods, Light scattering, Scattering

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Proceedings Article | 25 February 2008 Paper

cw, 325nm, 100mW semiconductor laser system as potential substitute for HeCd gas lasers

T. Schmitt, A. Able, R. Häring, B. Sumpf, G. Erbert, G. Tränkle, F. Lison, W. Kaenders

Proceedings Volume 6876, 687610 (2008) https://doi.org/10.1117/12.761864

KEYWORDS: Semiconductor lasers, Optical amplifiers, Mirrors, Laser systems engineering, Diodes, Crystals, Gas lasers, Ultraviolet radiation, Second-harmonic generation, Nonlinear crystals

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In the last decades, diode laser systems conquered the spectral range step-by-step from conventional gas lasers, wherever they can match or outperform in optical specifications. Although highly anticipated in the ultraviolet wavelength range, for instance in high-resolution lithography, biological and medical fluorescence applications or holography, cw single frequency operation of sufficient power has been a challenge for diode or other solid state laser systems. Currently this scope is still dominated by the HeCd gas laser, emitting at 325 nm with powers of up to 100 mW. In this paper we present a diode laser system emitting at 325 nm offering the same output power by efficient second harmonic generation (SHG) of a master oscillator power amplifier (MOPA) at 650 nm. For the master oscillator a ridge waveguide diode is anti-reflection coated and used in an external cavity diode laser (ECDL) with grating feedback in Littrow configuration. This setup features a MHz line width (coherence length of 100m), a coarse tuning range from 649 nm to 657 nm and a mode hope free tuning of 20 GHz. In a second step, we use a tapered amplifier to boost the output from the ECDL to a level of 400 mW, for powering an efficient second harmonic generation process in an enhancement cavity. Faraday isolators on both ends of the amplifier stage prevent back reflection and stabilize the single mode operation of the system. Together with astigmatism compensation this yields to a high spatial quality (M²<1.5) of the amplified beam. The frequency doubling is achieved by using a four mirror bow-tie enhancement resonator fitted with a Beta-Barium Borate (BBO) crystal. The cavity length is actively locked to the laser frequency using the Pound-Drever-Hall method. With this set-up, stable and reliable laser operation is achieved. After a few minutes warm-up time, fixed frequency and tunable UV output power of more than 100 mW could be generated, opening this important wavelength range for future product development.

Proceedings Article | 27 February 2007 Paper

670 nm tapered lasers and amplifier with output powers P greater than or equal to 1 W and nearly diffraction limited beam quality

B. Sumpf, G. Erbert, J. Fricke, P. Froese, R. Häring, W. Kaenders, A. Klehr, F. Lison, P. Ressel, H. Wenzel, M. Weyers, M. Zorn, G. Tränkle

Proceedings Volume 6485, 648517 (2007) https://doi.org/10.1117/12.697935

KEYWORDS: Amplifiers, Diffraction, Semiconductor lasers, Gallium, Waveguides, Near field, Laser beam propagation, Measurement devices, Manufacturing, Spectroscopy

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Proceedings Article | 8 February 2007 Paper

670 nm semiconductor lasers for lithium spectroscopy with 1W

R. Häring, B. Sumpf, G. Erbert, G. Tränkle, F. Lison, W. Kaenders

Proceedings Volume 6485, 648516 (2007) https://doi.org/10.1117/12.697574

KEYWORDS: Optical amplifiers, Semiconductor lasers, Lithium, Diodes, Spectroscopy, Laser systems engineering, Oscillators, Laser spectroscopy, Diffraction, Tunable lasers

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Proceedings Article | 27 April 2005 Paper

10-W peak power from a gain-switched picosecond all-semiconductor laser

Reto Haring, Thorsten Schmitt, Aude-Reine Bellancourt, Frank Lison, Kristian Lauritsen, Rainer Erdmann, Wilhelm Kaenders

Proceedings Volume 5707, (2005) https://doi.org/10.1117/12.591479

KEYWORDS: Semiconductor lasers, Picosecond phenomena, Optical amplifiers, Laser systems engineering, Microscopy, Pulsed laser operation, Solids, Second-harmonic generation, Diodes, Oscillators

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Showing 5 of 8 publications

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