In many type-II superlattice infrared detector architectures, performance at low temperatures is limited due to the dependence on minority hole conduction for operation, with holes having a high effective mass in the vertical direction. This inherently results in a decreased (especially as temperature is reduced) carrier diffusion length in the absorber, which can limit the detector quantum efficiency. The alternative pBpn architecture utilizes minority electrons for detection which have a higher mobility and enhanced collection. A general limitation of the pBpn design is that surface currents are often found to dominate the dark current density. This paper explores the effect of varying the absorber region pn junction growth parameters in an attempt to influence the surface current magnitude. An analysis of the surface vs. bulk contributions of the dark current is made as a function of absorber design, and potential sources of the surface current are presented. Ultimately, it is determined that the surface current magnitude is independent of the bulk absorber properties varied, implying that the surface properties, especially of the p-type absorber, must be altered to effectively mitigate the surface current.
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