Dr. Rodney A. Petr Profile

Dr. Rodney A. Petr

Senior Engineer at Textron Systems Corp

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 24 February 2009 Paper

Paper

Fault protection of broad-area laser diodes

J. Jacob, R. Petr, M. Jaspan, S. Swartz, M. Knapczyk, A. Flusberg, A. Chin, I. Smilanski

Proceedings Volume 7198, 719815 (2009) https://doi.org/10.1117/12.807717

KEYWORDS: Semiconductor lasers, Near field optics, Optical resonators, Active optics, Optics manufacturing, Electronics, Diodes, High power lasers, Absorption, Laser scattering

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Proceedings Article | 24 February 2009 Paper

Paper

A comprehensive model of catastrophic optical-damage in broad-area laser diodes

A. Chin, R. Bertaska, M. Jaspan, A. Flusberg, S. Swartz, M. Knapczyk, R. Petr, I. Smilanski, J. Jacob

Proceedings Volume 7198, 71981A (2009) https://doi.org/10.1117/12.804834

KEYWORDS: Semiconductor lasers, Near field optics, Near field, Electroluminescence, Scanning transmission electron microscopy, Interfaces, Crystals, Laser optics, Diodes, Aluminum

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Proceedings Article | 23 October 2002 Paper

Paper

X-ray spectral measurements of a dense plasma focus

Robert Whitlock, Charles Dozier, Daniel Newman, Rodney Petr, Jay Freshman, David Hoey, John Heaton

Proceedings Volume 4781, (2002) https://doi.org/10.1117/12.456515

KEYWORDS: X-rays, Neon, Plasma, Spectrographs, Crystals, Lithography, X-ray sources, Analytical research, Silicon, Beryllium

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Proceedings Article | 4 January 1995 Paper

Paper

Numerical analysis of direct current and transient characteristics on n+-i-n+ optically activated switches

Ashok Parthasarathy, Juin Liou, Rodney Petr, A. Ortiz-Conde

Proceedings Volume 2343, (1995) https://doi.org/10.1117/12.198669

KEYWORDS: Silicon carbide, Silicon, Switches, Diodes, Cryogenics, Switching, Medical devices, Numerical analysis, Semiconductors, Inductance

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Proceedings Article | 12 May 1992 Paper

Paper

Effect of contact space charge on current ratings of cryogenic silicon photoconductive switches

Rodney Petr, James Reilly, Raymond Schaefer, George Kachen

Proceedings Volume 1632, (1992) https://doi.org/10.1117/12.59082

KEYWORDS: Switches, Silicon, Cryogenics, Electrons, Switching, Numerical modeling, Semiconductors, Instrument modeling, Doping, Diffusion

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