In this work, we performed temperature-dependent studies of the THz transient amplitude FeCo waveformes, from a FeCo/graphene nanobilayer sample, triggered by fs pulsed laser in the 80–400 K range. We show that a due-twofold extension, in the range 80–300 K the amplitude increases with temperature and tends to saturate above this range. This dependence contrasts sharply with the temperature dependence of the FeCo film's magnetization, which shows a typical ferromagnetic (FM) trend with Curie temperature well above 400 K. We explain this discrepancy, as the presence of an antiferromagnetic (AFM) at the FeCo/graphene interface, which is associated with the native oxide formed at the FeCo surface. The Angle Resolved X-ray Photoelectron Spectroscopy studies of a bare FeCo film revealed coexistence of the metallic [Co(0), Fe(0)] and antiferromagnetic [Co(II)O and the Fe(III)2O3] phases, at the sample surface. The observation of the exchange bias in our magnetization hysteresis loop of a FeCo film confirms presence of an FM/AFM interface layer at the FeCo surface. In summary, we conclude that the temperature dependence of the THz transient amplitude is governed by the AFM phase.
We report on fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs (LT-GaAs). In our experiments, the LT-GaAs/AlAs bilayers were grown on 2-inch diameter, semi-insulating GaAs wafers by a molecular beam epitaxy. Next, the bilayer was patterned to form 10×10 μm2 to 150×150 μm2 structures using photolithography and ion beam etching. The AlAs layer was then selectively etched in diluted HF solution, and the LT-GaAs device was lifted from its substrate and transferred on top of a variety of substrates including Si, MgO/YBaCuO, Al2O3, and a plastic foil. Following the transfer, metallic coplanar transmission lines were fabricated on top of the LT-GaAs structure, forming a metal-semiconductor-metal photodetectors or photomixer structures. Our freestanding devices exhibited above 200 V breakdown voltages and dark currents at 100 V below 3×10-7 A. Device photoresponse was measured using an electro-optic sampling technique with 100-fs-wide laser pulses at wavelengths of 810 nm and 405 nm as the excitation source. For 810-nm excitation, we measured 0.55 ps-wide electrical transients with voltage amplitudes of up to 1.3 V. The signal amplitude was a linear function of the applied voltage bias, as well as a linear function of the laser excitation power, below well-defined saturation thresholds. Output power from the freestanding photomixers was measured with two-beam laser illumination experimental setup. Reported fabrication technique is suitable for the LT-GaAs integration with a range of semiconducting, superconducting, and organic materials for high-frequency hybrid optoelectronic applications.
We report on fabrication and ultrafast photoresponse of novel, freestanding low-temperature-grown GaAs (LT-GaAs) photoconductive (PC) devices. 1-μm-thick, LT-GaAs single-crystal films were grown by molecular beam epitaxy at the temperature range of 200°C to 250°C. Next, the films were patterned to the desired device sizes, lifted-off from their host substrates, and placed on predetermiend places on either SiO2/Si or MgO wafers. Our freestnding LT-GaAs devices consisted of either approximately 20-μm by 20-μm PC switches, or 150-μm by 150-μm metal-semiconductor-metal (MSM) interdigitated structures with Ti/Au fingers patterned directly on top of the LT-GaAs film. For testing purposes, our devices were integrated with Ti/Au coplanar striplines, fabricated directly on SiO2/Si and MgO substrates. The test structures were illuminated with 100-fs-wide optical pulses and their time-resolved photoresponse was measured with an electro-optic sampling system, characterized by 200-fs time resolution and sub-millivolt sensitivity. Using 810-nm optical excitation, we recorded as narrow as 360-fs-wide electrical signals (1.25 THz, 3-dB bandwidth) for PC switches, resulting in 155 fs carrier lifetime in our freestanding LT-GaAs. For both types of devices, the photoresponse amplitude was a linear function of the applied voltage bias, as well as a linear function of the laser excitation power, below well-defined saturation thresholds. Our freestanding photo-switches are robust and very reproducible. They are best suited for applications in hybrid optoelectronic and ultrafast electronic systems, since they can be placed at virtually any point on a test circuit.
We present comprehensive experimental and numerical studies of the subpicosecond switching dynamics of YBa2Cu3O7-x (YBCO) grain-boundary Josephson junctions, excited by single-picosecond electrical pulses. The test structures were patterned in 100-nm- thick YBCO films grown by pulsed laser deposition on (100) MgO bicrystal substrates. Each sample consisted of a coplanar strip (CPS) transmission line, a microbridge acting as the electrical pulse generator, and a single Josephson junction positioned between the CPS lines about 100 micrometer away from the bridge. The junctions were characterized by the nonhysteretic current-voltage characteristics with the characteristic voltage approximately equal to 2.0 mV at 20 K (temperature of our experiments). A train of 100- fs-wide optical pulses from a Ti:sapphire laser photo-excited the microbridge and generated 2-ps-wide electrical pulses, which were then applied to switch the junction. In addition to the input pulse, the junction was dc-biased at +0.7 Ic, -0.7 Ic, +1.5 Ic, -1.5 Ic, and zero-Ic, where Ic is junction critical current. Time-resolved dynamics of the junction response was studied with the help of our cryogenic electro-optic sampling system, which can be regarded as a sampling oscilloscope featuring < 200-fs time resolution and < 150-(mu) V voltage sensitivity. We obtained 0.7-ps-wide single-flux-quantum (SFQ) pulses generated as a result of the junction switching process. The measurements were compared to numerical computations based on the equivalent circuit containing a resistively shunted Josephson junction, and we have found a satisfactory agreement between our simulations and experimental data. We believe our findings provide experimental confirmation of the potential of YBCO Josephson gattes as building blocks of ultrafast (sub-THz) digital electronics.
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