Using rigorous coupled wave analysis (RCWA) and finite element method (FEM) simulations together, many interesting ellipsometric measurements can be investigated. This work specifically focuses on simulating copper grating structures that are plasmonically active. Looking at near-field images and Mueller matrix spectra, understanding of physical phenomena is possible. A general strategy for combatting convergence difficulties in RCWA simulations is proposed and applied. The example used is a copper cross-grating structure with known slow convergence. Baseline simulations on simple samples are provided for comparison and determination of FEM accuracy.
KEYWORDS: Finite element methods, Plasmons, 3D modeling, Statistical modeling, 3D metrology, Ellipsometry, Copper, Surface plasmons, Thin films, Scatterometry, Critical dimension metrology, Plasmonics, Dielectrics, Chemical elements
Using rigorous coupled wave analysis (RCWA) and finite element method (FEM) simulations together, many interesting ellipsometric measurements can be investigated. This work specifically focuses on simulating copper grating structures that are plasmonically active. Looking at near-field images and Mueller matrix spectra, understanding of physical phenomena is possible. A general strategy for combatting convergence difficulties in RCWA simulations is proposed and applied. The example used is a copper cross-grating structure with known slow convergence.
KEYWORDS: Line edge roughness, Silicon, Scatterometry, Data modeling, Optical components, Scanning electron microscopy, Picosecond phenomena, Chemical elements, Line width roughness, Optical properties
Measurement and control of line edge roughness (LER) is one of the most challenging issues facing patterning technology. As the critical dimensions (CDs) of patterned structures decrease, an LER of only a few nanometers negatively impacts device performance. Here, Mueller matrix (MM) spectroscopic ellipsometry-based scatterometry is used to characterize LER in periodic line-space structures in 28-nm pitch Si fin samples fabricated by directed self-assembly patterning. The optical response of the MM elements is influenced by structural parameters like pitch, CDs, height, and side-wall angle, as well as the optical properties of the materials. Evaluation and decoupling MM element response to LER from other structural parameters requires sensitivity analysis using scatterometry models that include LER. Here, an approach is developed that can be used to characterize LER in Si fins by comparing the optical responses generated by systematically varying the grating shape and measurement conditions. Finally, the validity of this approach is established by comparing the results obtained from power spectral density analysis of top down scanning electron microscope images and cross-sectional transmission electron microscope image of the 28-nm pitch Si fins.
Measurement and control of line edge roughness (LER) is one of the most challenging issues facing patterning
technology. As the critical dimensions (CD) of patterned structures decrease, LER of only a few nanometers can
negatively impact device performance. Here, Mueller matrix spectroscopic ellipsometry (MMSE) based scatterometry is
used to determine LER in periodic line-space structures in 28 nm pitch Si fin samples fabricated by directed selfassembly
(DSA) patterning. The optical response of the Mueller matrix (MM) elements is influenced by structural
parameters like pitch, CD, height, and side-wall angle (SWA), as well as the optical properties of the materials.
Evaluation and decoupling MM element response to LER from other structural parameters requires sensitivity analysis
using simulations of optical models that include LER. Here, an approach is developed that quantifies Si fin LER by
comparing the optical responses generated by systematically varying the grating shape and measurement conditions.
Finally, the validity of this approach is established by comparing the results obtained from top down scanning electron
microscope (SEM) images and cross-sectional TEM image of the 28 nm pitch Si fins.
Traditional ellipsometric measurements of copper gratings are limited to Angstrom resolution and are rather
insensitive to changes in the critical dimension (CD) or pitch of the structure. By adding another grating per-
pendicular and with larger CD and pitch, sensitivity is greatly enhanced. The spectra of one dimensional grat-
ings is largely featureless over a wide range of CDs while crossed-gratings exhibit large minima which shift with
changing CDs of less than an Angstrom. This improvement is due to plasmonic activity in the crossed-grating,
demonstrated in detail here. Mueller matrix element analysis under azimuthal rotation provides information
about cross-polarization and plasmon coupling conditions.
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