Proton irradiation-induced point defects acting as Shockley-Read-Hall (SRH) recombination centers in homoepitaxial GaN p-n junctions were characterized based on analyses of recombination current. Positron annihilation spectroscopy (PAS) data indicated that the vacancies in the GaN specimens comprised Ga vacancies and divacancies. The SRH lifetimes were decreased with the increase of the 4.2 MeV proton dose. For the same dose, the carrier concentrations and the SRH lifetimes for p-/n+ junctions were significantly reduced compared with those for p+/n- junction. The results suggest the asymmetry of defect formation in GaN based on the fact that intrinsic point defects in p-type GaN readily compensate for holes. The authors thank Mr. Takahide Yagi and Mr. Joji Ito of SHIATEX Co., Ltd., for performing proton irradiation and irradiation simulations. The authors thank Dr. Akira Uedono of Tsukuba Materials Research Co., Ltd., who is also a professor at the University of Tsukuba, for assisting in the assessment of vacancy types using PAS.The authors thank C-TEFs at Nagoya University for fabricating the devices used in this work.
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