The wafer bonding of III-V semiconductor materials with garnet thin films has become of increasing technological importance in integration of optical components. The wafer bonding between InP wafer and GGG was demonstrated by using O2 plasma surface activation. The same process was applied to the bonding process of InP/Ce:YIG, which is indispensable for the fabrication of an integrated optical waveguide isolator.
At low light intensities (linear regime), the absorption coefficient is independent of the light intensity; however, at sufficiently high intensities, the absorption becomes a nonlinear function. In case that incident optical power is sufficiently high to saturate the absorption coefficient, the optical power which is not absorbed is transmitted to the next region in the absorption layer if the photodetector is in longitudinal structure. Therefore this type of light-absorption behavior would be critical in analyzing the nonlinearity of a traveling-wave photodetector (TWPD). The transmitted optical power is absorbed as a nonlinear function of absorption coefficient, and the generated photocurrent due to the saturated absorption also shows the nonlinear characteristics. In this paper, we calculated the photocurrent of a TWPD considering the effect of the absorption saturation caused by high input intensity, and compared with the results using the linear function of absorption coefficient. For a different incident optical power, the nonlinear characteristics of photocurrent are analyzed for two-tone input signals, and thereby the inter-modulation distortions (IMD's) and spurious-free dynamic range (SFDR) are obtained.
Requirements for suitable communication systems with large capacity and high speed processing of information are rapidly on increase. Fiber-optic communication systems are presented for these requirements today. Modulation is one of the most important part in these system. Although many optical modulators already has been existed, for more high speed and performance we are interested in design of traveling-wave type electro-optic modulator which can be used for wide-band applications. Quantum dots(QDs) have long been expected to improve the performance of optical devices. Since their density of states due to the three-dimensional (3-D) carrier confinement behave as delta function, thus, QDs have the characteristics such as enhanced differential gain, suppressed thermal distribution of carriers, and a nearly zero alpha parameter at the peak gain. In this paper, we fabricated electro optic modulator using InAs/InGaAs columnar QD. The height of one QD is 4 nm and 10 periods of QDs are stacked including InGaAs capping layer. The peak wavelength of photoluminescence is 1260 nm at room temperature. The electrode of QD modulator is designed as Traveling-wave Mach-Zehnder type for high speed operation. And the microwave characteristics are simulated to design Traveling-wave QD modulator using Finite Difference-Time Domain method. Using simulation results, we fabricated Traveling-wave type quantum dot electro-optic modulator with varying the length of modulation region.
An all-optical full adder using semiconductor optical amplifiers has been demonstrated at 10 Gbps for the first time. The full adder consisted of XOR and NOR gates only utilizes the mechanism of cross-gain modulation. The full adder utilize two logic functions of SUM and CARRY, which can be demonstrated by using two XOR gates and four NOR gates, respectively. By passing signal A as probe signal and signal B as pump signal into SOA-1, Boolean A NOT B can be obtained. Also, by changing the role of signals A and B for SOA-2, Boolean NOT A B can be acquired. Addition of Boolean A NOT B and NOT A B results in NOT A B + A NOT B , which is Boolean expression of logic XOR. By passing this XOR signal and signal C into the second XOR gate with the same principle, SUM signal of the full adder can be obtained. The Boolean expression of SUM can be expressed as A # B # C . With the first three NOR gates, Boolean NOT(A+B), NOT(B+C), and NOT(C+A) can be obtained. With the addition of these outputs, Boolean NOT(A+B) + NOT(B+C) + NOT(C+A) can be formed. By injecting these outputs through the last NOR gate with clock signal, CARRY signal of the full adder can be realized. The Boolean expression of CARRY can be expressed as AB +BC +CA. The extinction ratio is about 6.1dB.
By using gain nonlinearity characteristics of semiconductor optical amplifier, an all-optical binary half adder at 10 Gbps is demonstrated. The half adder operates in single mechanism, which is XGM. The half adder utilizes two logic functions of SUM and CARRY, which can be demonstrated by using the XOR gate and the AND gate, respectively. In the XOR (A NOT B + NOT A B) gate, Boolean A NOT B is obtained by using signal A as a probe beam and signal B as a pump beam in SOA-1. Also, Boolean NOT A B is obtained by using signal B as a probe beam and signal A as a pump beam in SOA-2. By adding two outputs from SOA-1 and SOA-2, Boolean A NOT B + NOT A B (logic XOR) can be obtained. In the AND (AB ) gate, Boolean NOT B is firstly obtained by using signal B as a pump beam and clock signal as a probe beam in SOA-3. By passing signal A as a probe beam and NOT B as a pump beam through SOA-4, Boolean AB is acquired. By achieving this experiment, we also explored the possibilities for the enhanced complex logic operation and higher chances for multiple logic integration.
Bandwidth of a traveling-wave photodetector (TWPD) is limited by the optical absorption coefficient, velocity and impedance mismatches, and the drift time of photo-generated carriers in the intrinsic region. In these parameters, velocity and impedance mismatches have much influence on the bandwidth of TWPD. In this paper, we focus on mismatches, and propose a novel design to enhance the bandwidth. In the new structure, the thickness of a ground electrode increases as much as the ridge thickness. It forces the structure to have characteristics similar to a coplanar waveguide. We simulate this structure by finite different time domain Method in three dimensions and look-over frequency dependent parameters by Fourier transform for the detailed analysis of microwave characteristics such as characteristic impedance, microwave effective index, and microwave attenuation of TWPD. As a result, we obtain 50 (Omega) impedance matching and 89.7 % velocity matching using our novel structure.
We present mushroom-type TWEAM, which has improved velocity mismatch, with optimized impedance match compared to conventional modulators by reducing the distance between signal and ground metal line. In this paper, the layer structure of mushroom-type TW MQW EAM is designed for the operation of 1.55 um and optical index of active layer is designed to be 3.6. Also, we simulate an 1.55 um InGaAs/InGaAsP traveling-wave multiple quantum well electro- absorption modulator using 3D Finite Difference Time Domain method. Also, we investigate microwave characteristics in detail.
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