In 65nm and beyond generations, contact/via patterning is more challenging due to the complexity of manufacturing masks and the weak lithography process window. High NA scanners and suitable illumination can provide the desired resolution and dense pitch. However, there are trade-offs between process window, mask error enhancement factor (MEEF), and proximity effect. Some assistant technology is reported in literature, such as thermal flow, RELACS, SAFIER and sub-resolution assistant features. In this paper, we report a detailed study of the feasibility and limitations of these kinds of methods. Finally, we describe sub-resolution assistant features when used in QUASAR illumination with lower sigma, which have shown great promise to reduce the proximity effect and MEEF to get a larger lithography process window.
The design of photoresists for 193 nm exposure systems has received extensive attention, with variable lithograph processes based on single layer resist as well as bi-layer and top surface imaging resists already been developed. Single layer resist systems can generally be divided into two classes: alicyclic and acrylic based on the polymer backbone. In acrylic systems, etching resistance is achieved by attaching pendant groups that have low Ohnishi numbers. In alicyclic systems, the high etching resistant substituent is directly incorporated in the backbone. Excellent ArF single layer photoresists have been derived form both types of polymers in several investigations. This work report on terpolymers of maleic anhydride, t-butyl-5-norbornene-2- carboxylate and polycyclic methacrylate derivatives as a resin for ArF photoresists formulated. Using these terpolymers which have a compatible property for 2.38 wt percent TMAH developer. The effects of terpolymers, type of PAG, dissolution inhibitors, base component, baking temperature and time delay on ArF SLR are also investigated.
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