Nb doped TiO2 (TNO) is a promising transparent conducting oxide suitable for many applications such as in solar cells,
OLEDs, LEDs, FPDs, touch panels, etc. TNO thin film was deposited on an unheated glass substrate by pulsed direct
current (DC) magnetron co-sputtering. After annealing in a vacuum (<9×10-6 Torr) at 370° for 10 minutes, the film
crystallized into a polycrystalline anatase TiO2 structure, the resistivity decreased to 4.5×10-4 Ω-cm and the average
transmittance increased to above 70% in the visible light region. The influence of annealing on the TNO
amorphous-to-anatase phase transition, decrease in the resistivity and increase in the average transmittance will be
discussed.
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