In this paper, the key parameters including radius of curvature (ROC) and conic of aspherical microlens based on silicon material are calculated. Moreover, aspherical microlens was fabricated by utilizing UV lithography followed by the thermal reflow method. During preparation, the photoresist microlens was successfully transferred to the silicon substrate by precisely controlling the etching selection ratio. The anti-reflective film for air is prepared by an optical coater after chemical mechanical polishing. Finally, high-precision microlens was successfully fabricated and the key surface parameter of the radius of curvature, clear Aperture, surface profile deviation (SPD), and coupling efficiency were characterized by the white-light interferometer. The curvature tolerance can be controlled to ±3%, conic tolerance can be controlled to ±0.5, and surface profile deviation is below 25 nm. Furthermore, the surface reflectivity is below 0.3% between 1260 to 1620 nm. In addition, a coupling test system is developed by utilizing lasers, lenses, single-mode fibers (SMF) and other mechanical parts, and 78% of coupling efficiency is obtained by this system.
Monolithically integration of III-V compounds on Si (100) substrates has gained extensive interest due to its great potential in silicon photonics. However, it is greatly challenging to grow InGaAs on Si (100) because of massive defects arise in result of large lattice mismatch. In this paper, In0.53GaAs on GaP/Si (100) substrates by applying InxGa1-xAs/InP superlattices (SLs) dislocation filter layers were grown by solid-state molecular beam epitaxy (SSMBE). High-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), cross-sectional transmission electron microscopy (TEM), and energy dispersive spectrometer (EDS) mapping were used to investigate the defect formation and evolution in epitaxial layers. Three different types of defects were found on the surface. Defect formation was directly linked to different growth stages, in which oval defect was attributed to over desorption during the initial substrate treatment, and irregular defect was originated from the region between GaP islands in GaP buffer layer, while “pair” defect was constructed by stacking faults generated in the dislocation filter layers.
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