Photonic crystal as the porous silicon multilayer structure was designed and formed. Such structures can be characterized
by increased nonlinear optical response due to the weak light localization and could be used to implement all-optical
switching. We showed the possibility of the essential photonic band gap edge shift due to a shift of the photonic bandgap
edge in the intense laser radiation field due to light self-action effect. All-optical switching in photonic crystals
allows to realize logic gates that can be implemented in photonic devices.
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