In this talk, we will present fabrication and characterization of submicron Ga2O3 field-effect transistors (FETs) for high-frequency wireless communications. Superior small-signal characteristics of a current-gain cutoff frequency of 9 GHz and a maximum oscillation frequency of 27 GHz were achieved at a gate length of 200 nm. Simple delay-time analysis on the FETs was also performed to investigate an effective electron velocity and a proportion of each delay component to the total delay time.
In this talk, we will present two elemental device technologies developed for lateral Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs). One is nitrogen doping to a Ga2O3 channel layer to realize normally-off operation of Ga2O3 MOSFETs, and the other is an (AlGa)2O3 back barrier to shift a threshold gate voltage of Ga2O3 MOSFETs with a Si-implanted channel toward the positive voltage side.
Gallium oxide (Ga2O3) has emerged as a new competitor to SiC and GaN in the race toward next-generation power switching and harsh environment electronics by virtue of the excellent material properties and the relative ease of mass wafer production. In this proceedings paper, an overview of our recent development progress of Ga2O3 metal-oxide-semiconductor field-effect transistors and Schottky barrier diodes will be reported.
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