With the increasing demanding for miniaturization utility in infrared detectors, high operating temperature (HOT) and reduced size, weight and power consumption (SWaP) of infrared detectors are getting attention. A “diode-like” nBn barrier structure which can eliminate SRH generation-recombination dark current and operator at 130K has been realized in our lab. InAsSb/AlAsSb materials are grown by means of epitaxial on lattice-matched GaSb substrate. Material and device technology is being discussed, and a 30μm pitch 320×256 Focal Plane Array is displayed. NETD of this device is 14.4mK and the cut-off wavelength is 4.16μm at 130K. The non-uniformity increased form 2.88% to 3.55% during the temperature increased form 80K to 130K. At the end, photos taken by this FPA at 80K, 130K and 150K are displayed.
The underfill technology of a large-scale infrared focal plane detector chip is studied. The flow characteristics and principle of filling glue were analyzed. By changing the chip angle, the gap between the detector chip and the readout circuit is filled by fluid capillary action of spontaneous siphon phenomenon, and the incomplete filling caused by the rapid flow of glue around the edge of the chip was avoided at the same time. The formula of filling time of vertical dispensing is given, and the relationship between the process form, design appearance of large-scale infrared focal plane detector chip and dispensing process was analyzed.
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