Mr. Taras L. Petrenko Profile

Taras L. Petrenko

at Institute of Semiconductor Physics

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Proceedings Article | 27 September 2008 Paper

Nature of group-III related deep centers in lead telluride based semiconductors: Ga doping from vapor phase

Taras Petrenko, Sergey Plyatsko, Fiodor Sizov

Proceedings Volume 7100, 71002O (2008) https://doi.org/10.1117/12.798361

KEYWORDS: Gallium, Lead, Doping, Chemical species, Crystals, Molecules, Tellurium, Semiconductors, Molecular interactions, Group IV-VI semiconductors

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Doped with Ga lead telluride was taken as a model object to explain the nature of group-III deep levels in IV-VI semiconductors and to elucidate the vapour phase doping mechanism. For this goal interaction of various gallium-containing molecules with defect-free crystal as well as with native defects in PbTe were considered. The first-principle density functional theory calculations using 216-atoms supercell were performed. Formation energies for different point defects created in PbTe as a result of interaction the Ga₂Te molecules, Ga₂ dimers and single Ga atoms with a host crystal were calculated. Particularly Ga_Pb and Gai together with formation of accompanied Pb_i and Te_i self interstitials in various charge states were examined. In addition we propose the new type of defects - the impurity complex (Ga₂)_Pb which looks like < 111 >-oriented gallium dumbbell. Calculations suggest the double donor behavior and DX-like properties of this defect together with extremely low formation energy values. Namely, Ga_Pb centers are preferably formed under Ga₂Te doping while (Ga₂)_Pb + Pb_i ones are formed under Ga₂ or Ga doping. In all cases formation energies are negative and resulting defect concentration is determined by the reaction kinetic only. Mechanisms of the lead vacansy compensation with the vapour phase doping is considered as well.

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