Mr. Thomas Gubiotti Profile

Thomas Gubiotti

Product Marketing Manager at KLA Corp

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Publications (9)

SPIE Journal Paper | 5 August 2013 Open Access

Digital pattern generator: an electron-optical MEMS for massively parallel reflective electron beam lithography

Luca Grella, Allen Carroll, Kirk Murray, Mark McCord, William Tong, Alan Brodie, Thomas Gubiotti, Fuge Sun, Francoise Kidwingira, Shinichi Kojima, Paul Petric, Christopher Bevis, Bart Vereecke, Luc Haspeslagh, Anil Mane, Jeffrey Elam

JM3, Vol. 12, Issue 03, 031107, (August 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.3.031107

KEYWORDS: Electrodes, Mirrors, Microelectromechanical systems, Semiconducting wafers, Tin, Electron beam lithography, Metals, Aluminum, Coating, Reflectivity

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Proceedings Article | 26 March 2013 Paper

Preliminary investigation of shot noise, dose, and focus latitude for e-beam direct write

Alan Brodie, Shinichi Kojima, Mark McCord, Luca Grella, Thomas Gubiotti, Chris Bevis

Proceedings Volume 8680, 868029 (2013) https://doi.org/10.1117/12.2011908

KEYWORDS: Electron beam lithography, Monte Carlo methods, Lithography, Line width roughness, Photomasks, Electron beams, Logic, Photoresist processing, Nanoimprint lithography, Semiconductor manufacturing

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Proceedings Article | 26 March 2013 Paper

Reflective electron beam lithography: lithography results using CMOS controlled digital pattern generator chip

Thomas Gubiotti, Jeff Fuge Sun, Regina Freed, Francoise Kidwingira, Jason Yang, Chris Bevis, Allen Carroll, Alan Brodie, William Tong, Shy-Jay Lin, Wen-Chuan Wang, Luc Haspeslagh, Bart Vereecke

Proceedings Volume 8680, 86800H (2013) https://doi.org/10.1117/12.2010722

KEYWORDS: Semiconducting wafers, Electron beam lithography, Lithography, Coating, Logic, Electron beams, Polymethylmethacrylate, Printing, Reflectivity, Silica

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Maskless electron beam lithography can potentially extend semiconductor manufacturing to the 10 nm logic (16 nm half pitch) technology node and beyond. KLA-Tencor is developing Reflective Electron Beam Lithography (REBL) technology targeting high-volume 10 nm logic node performance. REBL uses a novel multi-column wafer writing system combined with an advanced stage architecture to enable the throughput and resolution required for a NGL system. Using a CMOS Digital Pattern Generator (DPG) chip with over one million microlenses, the system is capable of maskless printing of arbitrary patterns with pixel redundancy and pixel-by-pixel grayscaling at the wafer. Electrons are generated in a flood beam via a thermionic cathode at 50-100 keV and decelerated to illuminate the DPG chip. The DPG-modulated electron beam is then reaccelerated and demagnified 80-100x onto the wafer to be printed. Previously, KLA-Tencor reported on the development progress of the REBL tool for maskless lithography at and below the 10 nm logic technology node. Since that time, the REBL team has made good progress towards developing the REBL system and DPG for direct write lithography. REBL has been successful in manufacturing a CMOS controlled DPG chip with a stable charge drain coating and with all segments functioning. This DPG chip consists of an array of over one million electrostatic lenslets that can be switched on or off via CMOS voltages to pattern the flood electron beam. Testing has proven the validity of the design with regards to lenslet performance, contrast, lifetime, and pattern scrolling. This chip has been used in the REBL demonstration platform system for lithography on a moving stage in both PMMA and chemically amplified resist. Direct imaging of the aerial image has also been performed by magnifying the pattern at the wafer plane via a mag stack onto a YAG imaging screen. This paper will discuss the chip design improvements and new charge drain coating that have resulted in a functional DPG chip and will evaluate the current chip performance on the REBL system. Print results for line/space and device test patterns at the 100nm node will be presented.

Proceedings Article | 8 November 2012 Paper

Reflective electron-beam lithography performance for the 10nm logic node

Regina Freed, Thomas Gubiotti, Jeff Sun, Anthony Cheung, Jason Yang, Mark McCord, Paul Petric, Allen Carroll, Upendra Ummethala, Layton Hale, John Hench, Shinichi Kojima, Walter Mieher, Chris Bevis

Proceedings Volume 8522, 85221J (2012) https://doi.org/10.1117/12.964978

KEYWORDS: Electron beam lithography, Lithography, Semiconducting wafers, Reflectivity, Logic, YAG lasers, Direct write lithography, Wafer-level optics, Computer aided design, Electron beams

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Proceedings Article | 21 March 2012 Paper

Reflective electron-beam lithography: progress toward high-throughput production capability

Regina Freed, Thomas Gubiotti, Jeff Sun, Francoise Kidwingira, Jason Yang, Upendra Ummethala, Layton Hale, John Hench, Shinichi Kojima, Walter Mieher, Chris Bevis, Shy-Jay Lin, Wen-Chuan Wang

Proceedings Volume 8323, 83230H (2012) https://doi.org/10.1117/12.916090

KEYWORDS: Electron beam lithography, Semiconducting wafers, Electroluminescence, Lithography, Monte Carlo methods, Reflectivity, Electron beams, Direct write lithography, Silicon, Computer aided design

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Proceedings Article | 24 March 2009 Paper

Using scatterometry to improve process control during the spacer pitch splitting process

Scott Corboy, Craig MacNaughton, Thomas Gubiotti, Marcus Wollenweber

Proceedings Volume 7272, 727245 (2009) https://doi.org/10.1117/12.814349

KEYWORDS: Semiconducting wafers, Metrology, Scatterometry, Process control, Lithography, Optical lithography, Etching, High volume manufacturing, Integrated optics, Wafer-level optics

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Proceedings Article | 4 December 2008 Paper

Using scatterometry to improve process control during the spacer pitch splitting process

Scott Corboy, Craig MacNaughton, Thomas Gubiotti, Marcus Wollenweber

Proceedings Volume 7140, 714025 (2008) https://doi.org/10.1117/12.804578

KEYWORDS: Semiconducting wafers, Metrology, Scatterometry, Lithography, Process control, Optical lithography, Etching, High volume manufacturing, Integrated optics, Wafer-level optics

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Proceedings Article | 15 July 2003 Paper

Depth profile characterization of hydrogen implanted silicon using spectroscopic ellipsometry

Thomas Gubiotti, David Jacy, Ray Hoobler

Proceedings Volume 5041, (2003) https://doi.org/10.1117/12.499100

KEYWORDS: Silicon, Hydrogen, Semiconducting wafers, Data modeling, Ions, Metrology, Ion beams, Silica, Nondestructive evaluation, Ellipsometry

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Proceedings Article | 16 July 2002 Paper

Normal-incidence spectroscopic ellipsometry and polarized reflectometry for measurement and control of photoresist critical dimension

James Holden, Thomas Gubiotti, William McGahan, Mircea Dusa, Ton Kiers

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473439

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Scatterometry, Lithography, Metrology, Scatter measurement, Process control, Reflectometry, Data modeling, Spectroscopic ellipsometry

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Showing 5 of 9 publications

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