Dr. Thomas Henkel Profile

Dr. Thomas Henkel

at Qimonda Dresden GmbH & Co OHG

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 2 May 2008 Paper

Assessment and application of focus drilling for DRAM contact hole fabrication

Christoph Noelscher, Franck Jauzion-Graverolle, Thomas Henkel

Proceedings Volume 6792, 67920Q (2008) https://doi.org/10.1117/12.798807

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Photomasks, Lithography, Optical fiber cables, Colorimetry, Chromatic aberrations, Computer aided design, Calibration, Scanners

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Proceedings Article | 1 April 2008 Paper

AltPSM contact hole application at DRAM 4xnm nodes with dry 193nm lithography

Christoph Noelscher, Thomas Henkel, Franck Jauzion-Graverolle, Mario Hennig, Nicolo Morgana, Ralph Schlief, Molela Moukara, Roderick Koehle, Ralf Neubauer

Proceedings Volume 6924, 692446 (2008) https://doi.org/10.1117/12.772806

KEYWORDS: Photomasks, Optical proximity correction, Etching, Atrial fibrillation, Printing, Calibration, 3D modeling, 193nm lithography, Lithography, Mask making

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Proceedings Article | 18 June 2007 Paper

3D simulations of electromagnetic fields in nanostructures using the time-harmonic finite-element method

Sven Burger, Lin Zschiedrich, Frank Schmidt, Roderick Köhle, Thomas Henkel, Bernd Küchler, Christoph Nölscher

Proceedings Volume 6617, 66170V (2007) https://doi.org/10.1117/12.726236

KEYWORDS: Etching, Diffraction, Finite element methods, Photomasks, Computer simulations, Chemical elements, Electromagnetism, Optical lithography, Nanostructures, Radio propagation

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Proceedings Article | 5 November 2005 Paper

Comparative study of simulations and experiments for contact array patterns on attenuated phase shifting mask

Thomas Henkel, Martin Sczyrba, Christoph Noelscher

Proceedings Volume 5992, 59925G (2005) https://doi.org/10.1117/12.634349

KEYWORDS: Photomasks, Critical dimension metrology, 3D modeling, Error analysis, Calibration, Phase shifting, 3D acquisition, Lithography, Scanners, Semiconducting wafers

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Proceedings Article | 17 December 2003 Paper

High-accuracy simulation-based optical proximity correction

Martin Keck, Thomas Henkel, Ralf Ziebold, Christian Crell, Jörg Thiele

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.517462

KEYWORDS: Optical proximity correction, Data modeling, Photomasks, Scanning electron microscopy, Printing, Manufacturing, Semiconducting wafers, Critical dimension metrology, Lithography, Data processing

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