Ms. Trinh T. Van Profile

Trinh T. Van

Graduate Student Researcher at Univ of California Los Angeles

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Proceedings Article | 23 November 2005 Paper

Photoluminescence properties of Er-doped Y₂O₃ thin films by radical-enhanced atomic layer deposition

Trinh Van, John Bargar, Roman Ostroumov, Kang Wang, Jane Chang

Proceedings Volume 6002, 60020H (2005) https://doi.org/10.1117/12.634531

KEYWORDS: Erbium, Thin films, Atomic layer deposition, Adsorption, Luminescence, Ions, Absorption, Active optics, Metals, Doping

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Erbium-doped Y₂O₃ thin films were synthesized by combining radical-enhanced atomic layer deposition (RE-ALD) of Y₂O₃ and Er₂O₃ in an alternating fashion at 350°C. The Er doping level was precisely controlled to range from 6 to 14 at.% by varying the ratio of Y₂O₃:Er₂O₃ cycles during deposition. At 350°C, the films were found to be polycrystalline, showing a preferential growth direction in the [111] direction. Room-temperature photoluminescence (PL) at 1.54 μm, characteristic of the Er³⁺ intra 4f transition, was observed in a 500-Å Er-doped (6 at.%) Y₂O₃ film, showing well resolved Stark features indicating the proper incorporation of Er in the Y₂O₃ host. Extended X-ray absorption fine structure (EXAFS) analysis revealed a six-fold coordination of Er by O in all samples, suggesting that the PL quenching observed at high Er concentration (>8 at.%) is likely dominated by Er ion-ion interaction and not by Er immiscibility in the Y₂O₃ host. The effective absorption cross section for Er³⁺ ions incorporated in Y₂O₃ was determined to be ~10^-18 cm², about three orders of magnitude larger than the direct optical absorption cross section reported for Er³⁺ ions in a stoichiometric SiO₂ host.

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