An ERL-based EUV-FEL can provide EUV power of more than 1 kW for multiple scanners to overcome stochastic effects with a higher throughput. An IR-FEL project started at the KEK cERL as a NEDO project in order to develop high-power IR lasers for high-efficiency laser processing, and it can demonstrate proof of concept of the EUV-FEL for future lithography. The IR-FEL was constructed in May 2020 and commissioned in June to July 2020 and in February to March 2021. We will briefly review the EUV-FEL and present the construction and commissioning of the cERL IR-FEL for realizing the EUV-FEL for future lithography.
An ERL(energy recovery linac)-based EUV-FEL can provide EUV power of more than 1 kW for multiple scanners to overcome stochastic noise and to achieve higher throughput. An IR-FEL project started at the KEK cERL for the purpose of developing high-power IR lasers for high-efficiency laser processing, and it can demonstrate proof of concept of the EUV-FEL for future lithography. We will briefly review the EUV-FEL and present construction and commissioning of the cERL IR-FEL including future work.
An EUV-FEL is one of the promising candidates for the future high power EUV light source of more than 1 kW. While the design study on the FEL light source has been progressed, a most important milestone should be a real demonstration of the high repetition rate ERL-based FEL light production. In FY2019, a real Mid-Infrared FEL (MIR-FEL) project based on the compact ERL in KEK started and the beam commissioning was started from the beginning of March 2020. At the conference, the present results obtained from the MIR-FEL and the expected remained-study-works on future EUV-FEL will be presented.
It is important to develop the high power EUV light source up to 1 kW to realize the 3nm node, which is expected to be in production at 2023-24. To this end, an energy recovery linac (ERL)-based free electron laser (FEL) must be a most promising candidate, so that our group has done some feasibility studies from the view point of accelerator technology. In order to realize the EUV-FEL high power light source, it is also important to recognize the demand of end users and related problems on the FEL light source. Last year, we attended many conferences and workshops to learn these items and also we organized one day workshop “EUV-FEL Workshop” at Tokyo. You can find the presentation materials in a website of http://pfwww.kek.jp/PEARL/EUV-FEL_Workshop/presentaions.html.
One of the most important requirements is to reduce the size of the EUV-FEL system. The total system size is about 200 m (L).x 20 m (W) at our current design of the EUV-FEL with 160m linac, where the acceleration energy and current are 800 MeV and 10 mA, respectively. However, we had comments from semiconductor industry that it is too long to install the light source in a usual LSI Fab, so that we have to find out solutions to reduce the length of the accelerator systems to ~100 m. To this end, there are following several challenges.
1) Increasing the field gradient of the superconducting RF (SRF) cavity to reduce the total length of the linac.
2) Higher Q to reduce the RF loss in higher field gradient SRF cavity.
3) Reduction of the acceleration energy by introducing shorter period undulator .
4) Double loop accelerator system, in which the electron passes through a same linac twice and accelerated up to twice energy or accelerating cavities are placed on both loop sides.
The R&D directions of the above challenges on accelerator technologies will be presented.
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