A hybrid integrated single-wavelength laser with silicon micro-ring reflector is demonstrated theoretically and
experimentally. It consists of a heterogeneously integrated III-V section for optical gain, an adiabatic taper for light
coupling, and a silicon micro-ring reflector for both wavelength selection and light reflection. Heterogeneous integration
processes for multiple III-V chips bonded to an 8-inch Si wafer have been developed, which is promising for massive
production of hybrid lasers on Si. The III-V layer is introduced on top of a 220-nm thick SOI layer through low-temperature
wafer-boning technology. The optical coupling efficiency of >85% between III-V and Si waveguide has
been achieved. The silicon micro-ring reflector, as the key element of the hybrid laser, is studied, with its maximized
reflectivity of 85.6% demonstrated experimentally. The compact single-wavelength laser enables fully monolithic
integration on silicon wafer for optical communication and optical sensing application.
We demonstrate electrically-pumped III-V quantum-well lasers bonded on SiO2 with a metal-coated etched-mirror. The metal-coated etched-mirror allow the lasers to be used as on-chip laser, but our process design make sure that it requires no additional fabrication step to fabricate the metal-coated etched mirror. The bonded III-V on SiO2 also permits tight laser mode confinement in the active region due to high index contrast between III-V and SiO2. Moreover, it promises a flexible choice of host substrate, in which the silicon substrate could also be replaced with other materials. The laser devices demonstrated have the lowest threshold of 50 mA, a maximum output power of 9 mW and a differential quantum efficiency of 27.6%.
A new heterogeneously integrated III-V/Si laser structure is reported in this letter, which consists of a III-V
ridge waveguide gain section on silicon, III-V/Si optical vertical interconnect accesses (VIAs) and silicon-oninsulator
(SOI) nanophotonic waveguide sections. The III-V semiconductor layers are introduced on top of the 300
nm thick SOI layer through low temperature, plasma assisted direct wafer-bonding and etched to form III-V ridge
waveguide on silicon as the gain section. The optical VIA is formed by tapering the III-V and the beneath SOI in
the same direction with a length of 50 μm for efficient coupling of light down to the 600 nm wide silicon
nanophotonic waveguide or vice versa. Fabrication details and specification characterizations of this heterogeneous
III-V/Si Fabry–Pérot (FP) laser are given. The fabricated FP laser shows a continuous-wave lasing with a threshold
current of 65 mA at room temperature and the slope efficiency from single facet is 144 mW/A. The maximal single
facet emitting power is about 4.5 mW at a current of 100 mA and the side-mode suppression ratio is ~30 dB. This
new heterogeneously integrated III-V/Si laser structure demonstrated enables more complex laser configuration
with a sub-system on-chip for various applications.
A recently proposed two-staged photonic transistor that provides switching gain is based on the directional coupler with
an active arm and a passive arm in each stage. The manipulation of optical interference through optically-controlled gain
caused the switching. In the first stage, a long wavelength input signal pulse depletes carriers to change absorption and
switch a short wavelength beam into the second stage. In the second stage, the switched short wavelength beam fills the
conduction band with carriers to increase the gain seen by another long wavelength pump beam to switch it as the output
signal. Through a suitable design of intensity and wavelength of the interacting beams and the length of each stage,
photonic transistor exhibits switching gain and hence can drive multiple stages (high fan-out and cascadability). The
smaller the detuning of wavelength between the interacting optical fields or shorter the photonic transistor length,
smaller is the cumulative change in linear absorption/gain, manifesting in a smaller switching gain. Since the short
wavelength beam fills the conduction band with carriers, its intensity depends on the ground state absorption of the
medium, α0. And, since the long wavelength beam depletes carriers filled by the short wavelength beam, its wavelength
depends on the gain of the pumped medium, g0. In this paper, we show that the operational intensities of photonic
transistor must be such that |α0L1|>27 and g0L2>3.2 to achieve a gain>3dB, where L1 and L2 are the length of 1st and 2nd
stages respectively.
An efficient modular approach is used to develop components for a 3D simulator for complex semiconductor
LED and laser structures. In this approach, only drift transport is simulated in bulk regions, while the active
region is simulated with models of varying complexity. The approach is tested using a basic vertical-cavity
surface emitting laser (VCSEL) structure, and comparisons are made with experimental data. This approach
is advantageous for fast simulation of complex photonic crystal LEDs and VCSELs, for which 2D simulation is
inadequate.
The dispersion relation of a cavity surrounded by multi-layered photonic crystals is obtained using a fast, accurate
and generalized round trip operator. This will assist in the optical design of photonic crystal patterned lasers.
A 2D quasi-bandgap was obtained for the lowest order mode of a 1D multi-layered photonic crystal. Although
the method is demonstrated for 1D photonic crystal layers, the method is general and can be extended to two
dimensional systems.
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