Mr. Wei-Te Hsu Profile

Wei-Te Hsu

at Industrial Technology Research Institute

SPIE Involvement:

Author

Publications (9)

Proceedings Article | 3 April 2012 Paper

In-line metrology of 3D interconnect processes

Y. Ku, D. Shyu, P. Chang, W. Hsu

Proceedings Volume 8324, 832411 (2012) https://doi.org/10.1117/12.915810

KEYWORDS: Semiconducting wafers, Metrology, 3D metrology, Silicon, Reflectivity, Copper, Metals, Infrared imaging, Confocal microscopy, Reflectometry

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Proceedings Article | 27 May 2011 Paper

Reflectometry for TSV etching depth inspection

Wei-Te Hsu, Yi-Sha Ku

Proceedings Volume 8082, 808226 (2011) https://doi.org/10.1117/12.889238

KEYWORDS: Reflectometry, Thin films, Etching, Reflectivity, Scanning electron microscopy, Reflection, Inspection, Silicon, Spectroscopy, Metrology

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TSV (Through Silicon Via) is a vertical via that passes through a silicon wafer or chip. This technology is a major enabler for three-dimensional integrated circuits (3D ICs) of stacking different functional chips. Vertical stacking chips of 3D ICs allows gates to be placed closer and thereby provides more computing process in a compact space. As TSV technique with unique processing steps that are not used in standard 2D ICs, a number of new parameters need to be measured and controlled. TSV etching depth is a critical parameter for ensuring the performance of 3D ICs, thus metrology and inspection of the TSV etching depth are very profitability of the overall manufacturing process. Spectroscopic reflectometry (SR) is currently being used in industry to measure the internal reflectance of thin films, from which the thickness and other properties can be obtained. It is a non-contact and non-destructive in-line metrology tool. In this study, we demonstrate the use of SR by employing the fast Fourier transform (FFT) algorithm for measuring the etching via depth and the thickness of oxide layer in one shot measurement. First, the specifications of reflectometer system, such as spectral range and resolution of spectrometer for depth analysis are discussed. The depth resolution is better in the longer measuring spectral range, thus small difference of TSVs' depth can be well distinguished. The spectrometer with high resolution is used to collect the authentic spectrum from etching depth with high aspect ratio. We verified our system through a mutual measurement comparison with the national standard traceable step height system. Our system is capable of measuring step height up to 100 um and measurement precision is in the range of 0.6 um. In this report, TSV arrays with nominal CD 5~25 um, and aspect ratio up to 10 are measured. Metrology results from actual 3D interconnect processing wafers indicate our system provides excellent correlation to cross-section scanning electron microscope (SEM) measurement results. The maximum discrepancy between each other is smaller than 1 um.

Proceedings Article | 27 May 2011 Paper

3D interconnect metrology in CMS/ITRI

Y. S. Ku, D. M. Shyu, W. T. Hsu, P. Y. Chang, Y. C. Chen, H. L. Pang

Proceedings Volume 8082, 80820I (2011) https://doi.org/10.1117/12.889401

KEYWORDS: Semiconducting wafers, Silicon, Copper, 3D metrology, Metrology, Confocal microscopy, Reflectivity, Microscopes, Metals, Annealing

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SPIE Journal Paper | 1 December 2009

Accuracy of diffraction-based overlay metrology using a single array target

Yi-sha Ku, Hsiu-Lan Pang, Wei-Te Hsu, Deh-Ming Shyu

OE, Vol. 48, Issue 12, 123601, (December 2009) https://doi.org/10.1117/12.10.1117/1.3275449

KEYWORDS: Overlay metrology, Diffraction, Scatterometry, Scatter measurement, Critical dimension metrology, Optical engineering, Detection and tracking algorithms, Diffraction gratings, Photoresist materials, Semiconductors

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Proceedings Article | 10 September 2009 Paper

A novel method for overlay measurement by scatterometry

Wei-Te Hsu, Yi-Sha Ku, Deh-Ming Shyu

Proceedings Volume 7432, 74320F (2009) https://doi.org/10.1117/12.825091

KEYWORDS: Overlay metrology, Diffraction, Scatterometry, Diffraction gratings, Microscopes, Metrology, Imaging systems, Fresnel lenses, Scatter measurement, Reflectivity

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Proceedings Article | 21 August 2009 Paper

Improved diffraction-based overlay metrology by use of two dimensional array target

Yi-Sha Ku, Hsiu-Lan Pang, Weite Hsu, Deh-Ming Shyu

Proceedings Volume 7405, 74050C (2009) https://doi.org/10.1117/12.825524

KEYWORDS: Overlay metrology, Diffraction, Scatterometry, Signal processing, Critical dimension metrology, Photoresist materials, Diffraction gratings, Scatter measurement, Electromagnetism, Model-based design

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Proceedings Article | 24 March 2009 Paper

Angle-resolved scatterfield microscope for linewidth measurement

Deh-Ming Shyu, Yi-sha Ku, Wei-Te Hsu

Proceedings Volume 7272, 72721L (2009) https://doi.org/10.1117/12.813982

KEYWORDS: Spatial light modulators, Objectives, Fresnel lenses, Modulation, Silicon, Phase modulation, Microscopes, Relays, Optical microscopes, Metrology

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Proceedings Article | 29 August 2008 Paper

Optimal measurement method for diffraction-based overlay metrology

Wei-Te Hsu, Yi-Sha Ku

Proceedings Volume 7066, 70660L (2008) https://doi.org/10.1117/12.793185

KEYWORDS: Overlay metrology, Diffraction gratings, Diffraction, Critical dimension metrology, Reflectivity, Metrology, Scatterometry, Silicon, Signal processing, Optical design

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SPIE Journal Paper | 1 August 2008

Optimal measurement method for scatterometer-based overlay metrology

Yi-Sha Ku, Weite Hsu, Sen-Yih Chou, Deh-Ming Shyu

OE, Vol. 47, Issue 08, 083604, (August 2008) https://doi.org/10.1117/12.10.1117/1.2969120

KEYWORDS: Overlay metrology, Diffraction, Diffraction gratings, Scatterometry, Scatter measurement, Signal processing, Optical design, Optical engineering, Critical dimension metrology, Reflectivity

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Showing 5 of 9 publications

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