Silicon photomultiplier (SiPM) is a large-scale array solid-state photodetector based on avalanche multiplication effect in semiconductor technology for low photon flux detection. In order to improve the quantum efficiency and gain factor of SiPM devices and satisfy the application of devices in high economic and social values such as medical health, military security and space exploration, SiPM structures and key technologies with different process designs or materials have been studied and published. This paper briefly describes the basic structure, technical principle and development process of SiPM devices, and describes several typical SiPM quenching structures in the development process. Finally, the products and application prospects of SiPM devices are prospected.
Inter-column transfer EMCCD uses N-type epitaxial P-well N-channel and four-layer polysilicon double-layer metal technology. It has 768×576 effective pixels and the pixel size is 13μm×13μm. The sensor has a global shutter, the maximum horizontal readout rate is 40MHz, and the dynamic range of the non-multiplier mode is 68dB.
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