Waveguide-coupled germanium (Ge) p-i-n photodetectors (PDs) have attracted much attention and have been investigated widely due to their high performance and enable on-chip integration. Conventional waveguide-coupled Ge PDs requires metal contact on Ge as well as doping in Ge to form the p-i-n junction. However, in these devices, the light absorption of metal contacts on Ge leads to a sharp decrease in responsivity. In addition, in the standard CMOS foundries, the technology of forming metal contact with Ge is immature. In this paper, we report on the design, fabrication, and experimental demonstration of an integrated lateral waveguide p-i-n photodetector (PD). We experimentally obtained at a reverse voltage of 3V a dark current of 11 nA, a responsivity higher than 0.73 A/W at 1550 nm wavelength, and a -3 dB opto-electrical cut-off frequency over 66 GHz. The combined benefits of decreased process complexity and high-performance device operation pave the way towards attractive integration strategies to deploy costeffective photonic transceivers on silicon-on-insulator substrates.
Waveguide-coupled germanium (Ge) p-i-n photodetectors (PDs) have attracted much attention and have been investigated widely due to their high performance and enable on-chip integration. In this paper, we report on the fabrication and experimental demonstration of an integrated lateral waveguide p-i-n PD with additional Si doping. In order to achieve a high performance detector, we used a novel silicon substrate doping to improve the electric field intensity in the active region. It is demonstrated by experiment that the strategy using additional Si doping to decrease dark current and to increase the bandwidth is more favorable. Using the additional Si doped p-i-n junction, the waveguide coupled Ge-on-Si p-i-n PD shows a comprehensive performance improvement. With comparison to the conventional waveguide coupled Ge-on-Si p-i-n PD, such a PD, owns an about 60% improvement on the tested -3 dB opto-electrical cut-off frequency and shows the smaller dark current at voltage of -1 V. We obtained at a reverse voltage of 1V a dark current lower than 30 nA, a responsivity higher than 1.1 A/W at 1550 nm wavelength, and a -3 dB optoelectrical cut-off frequency over 25 GHz. Evidently, the waveguide coupled Ge-on-Si p-i-n PD with additional p-i-n junction is very effective to promote the performance of device, which is very promising to be applied in the further high power Ge-on-Si PD fabrication.
GaN-based multiple quantum well (MQW) light emitting diodes (LEDs) are promising to replace the conventional incandescent and fluorescent lamps due to recent improvements in material quality and device .Blue InGaN/GaN multiple quantum well light-emitting diodes with the conventional AlGaN and AlGaN-GaN-AlGaN (AGA) and many other novel structure electron blocking layer(EBL) are numerically investigated. When either AlGaN layer of a AGA EBL is inserted by a GaN layer leading to a multilayered structure, the simulation results show the Fermi level and energy gap of the EBL make a remarkable difference owing to the changed structure and the device with the new structure creates much higher output power as compared to those with conventional structure and AGA structure due to the enhancement of the electron confinement and improvement of the hole
In this paper, we present the design and characterization of a novel GaN based ultraviolet (UV) detector. The detector consists of two GaN PIN diodes, connected in antiparallel configuration. Two layers of AlGaN, a 100 nm Al0.4Ga0.6N barrier layer and a 400 nm Al0.33Ga0.67N filter layer are deposited on top of one of the PIN diodes. The filter layer exhibits strong absorption of photons at about 310 nm and below. The barrier layer improves the short wave rejection ratio as it can prevent the diffusion of the carriers generated in the filter layer. Due to the antiparallel connection of the two diodes, the cutoff wavelength of the detector is 300 nm and the overall photocurrent of the detector provides good similarity to the Erythemal action spectrum.
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