The surface quality of copper (Cu) microstructures restricts the improvement of their performance. In order to improve the surface quality of Cu microstructures, a subsequent polishing process is required for the microstructures. Electrochemical polishing (ECP) has great potential in high-quality surface polishing of metal structural parts. The viscous film is the key to the realization of the Cu ECP process. In this paper, a multiphysics coupled model is used to analyze the effect of the viscous film and its fluidity on the current density and material removal rate (MRR) at different positions of the microstructure. The simulation and experimental results show that the generation and flow of the viscous film during the ECP process leads to differences in the current density at different positions of the microstructure, thus causing differences in the MRR at different positions of the microstructure. The material removal of the microgroove with thicker viscous film was uneven and smaller. The ability of ECP to process the microgroove was improved by reducing the accumulation of viscous film in the microgroove. This study is not only instructive for the ECP process of microstructures, but also contributes to the further understanding of the ECP mechanism.
White light scanning interferometry (WLSI) is a fast, noncontact, high-precision method to measure three-dimensional (3D) surface profile and extensively used in roughness measurement of ultra-precision machined surface. However, due to Rayleigh criterion, the lateral resolution of WLSI is limited to hundreds of nanometers. It is hard to measure rough surfaces with delicate details that adjacent distance less than lateral resolution. Also, WLSI can’t measure profiles with large surface gradient for no light reflected and received by objective lens. In this work, with a proposed simulation measurement model, surface gradient error and lateral resolution error on measuring result of WLSI is studied by simulating the response characteristics of sinusoidal signal, square signal, sawtooth signal and actual surface profile of grinding silicon wafer measured by AFM respectively. The effectiveness of the simulation model is verified by comparing the simulation results with the experimental results. The mechanism of surface gradient error and lateral resolution error is revealed from the perspective of simulation analysis, which has certain guiding significance for the future research of error analysis on white light scanning interference.
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