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Yongzhao Yao
NIMS Junior Researcher at National Institute for Materials Science
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Publications (1)
Proceedings Article | 19 February 2009 Paper
Growth and characterization of isotopic (nat)Ga(15)N by molecular-beam epitaxy
Yong-zhao Yao, Takeshi Ohgaki, Kenji Matsumoto, Isao Sakaguchi, Yoshiki Wada, Hajime Haneda, Takashi Sekiguchi, Naoki Ohashi
Proceedings Volume 7216, 72162D (2009) https://doi.org/10.1117/12.808461
KEYWORDS: Gallium nitride, Raman spectroscopy, Gallium, Epitaxy, Phonons, Nitrogen, Luminescence, Temperature metrology, Chemical species, Diffraction
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