In this study, we prepared the EUV metal resist, which included ZrO2 nano-particle and three type of ligands such as 2-propenoic acid 2-methyl (MAA), propanoic acid 2-methyl (IBA) and vinylbenzoic acid (VBA). In this study, we prepared the following resists by blending each material separately for evaluating the outgassing from the view point of EUV resist materials. We prepared three type of samples on a basis of ZrO2-MAA, ZrO2-IBA and ZrO2-VBA, each resist was coated on a silicon wafer, and we evaluated the outgassing from these samples during irradiation of 2 keV electron by in-situ mass spectrometry. From the results of mass spectrum, we observed the outgassing of PAG as unique peaks. And each ligand peak was distributed over the low mass range. On the other hand, the ZrO2 peaks could not be observe in mass spectrum of each sample. Thus, ZrO2 nano-particles might not be evaporating during 2keV electron irradiation.
In this study, we evaluated the outgassing generated from EUV resist which included metal oxide nanoparticles during electron irradiation. We prepared two types of samples including ZrO2 and TeO2, and a sample without including metal oxide, respectively. The outgassing species were measured from each sample during electron irradiation at the Eth exposure dose. The electron acceleration energy was 2 keV. In the outgassing measurement, we used original in-situ outgassing monitoring system in quadrupole mass spectrometry which we developed. From the results of mass spectrum, we observed CO2, H2O as typical mass peaks at each sample. And also we observed C4H4O2 and C4H6O2 peaks in spectrum of each sample. And these peaks are guessed 2(5H)-furanone and butyrolactone generated from base polymer. C6H6 peaks were observed in the mass spectrum of including ZrO2 and TeO2. We guessed that these peaks are from benzene generated from photo-acid generator (PAG). On the other hand, C6H6 peaks were not observed in the mass spectrum of without metal oxide. About this, we could not explain that mechanism by our knowledge of the present, but we can guess that metal oxide nanoparticles worked to generate benzene. About metal oxide peaks did not observe about mass spectrum of each sample. Each metal or metal oxide might not be evaporated during electron irradiation.
A system for photo-chemical analysis of EUV lithography processes has been
developed. This system has consists of 3 units: (1) an exposure that uses the Z-Pinch
(Energetiq Tech.) EUV Light source (DPP) to carry out a flood exposure, (2) a
measurement system RDA (Litho Tech Japan) for the development rate of photo-resists,
and (3) a simulation unit that utilizes PROLITH (KLA-Tencor) to calculate the resist
profiles and process latitude using the measured development rate data. With this
system, preliminary evaluation of the performance of EUV lithography can be
performed without any lithography tool (Stepper and Scanner system) that is capable of
imaging and alignment. Profiles for 32 nm line and space pattern are simulated for the
EUV resist (Posi-2 resist by TOK) by using VLES that hat has sensitivity at the 13.5nm
wavelength. The simulation successfully predicts the resist behavior. Thus it is
confirmed that the system enables efficient evaluation of the performance of EUV
lithography processes.
Formulating high sensitivity and high resolution EUV Resists is a
critical issue gating the adoption of EUV lithography. The ability of
resist manufacturers to quickly screen outgassing rates and
sensitivity of EUV resists will facilitate faster formulation of a
production-ready EUV photoresist. The high power and low cost per
watt of the Energetiq EQ-10 light source enables relatively simple
designs without complex optics to deliver relevant data efficiently.
Because the source operates without electrodes, a significant source
of contamination is removed, further simplifying the design of
exposure systems.
Data will be presented from two prototype exposure systems. The
first, in operation at Osaka University, Japan, has been used for
in-band flood exposure experiments to test resist sensitivity and
develop photochemical modeling capability. The second, in operation
at SUNY-Albany, integrates exposure/sensitivity with outgassing
measurements (GC/MS and RGA) and also allows direct tests of mirror
contamination, at power densities near those required for Beta
exposure tools. Features of both experiments have been integrated
into a commercial device. Details of this tool -- the Litho Tech
Japan EUVES-7000 system for resist outgassing and exposure -- will be
presented at this meeting.
F2 lithography and 193nm immersion lithography are considered candidates for 65nm node lithography technology. Of these two, 193nm immersion lithography, the latest incarnation of ArF lithography, has attracted more attention. Immersion lithography is different from conventional dry lithography in that the resist is exposed in liquid. Thus, the resist materials leaching from the resist film during exposure and the dissolution of acids generated by the exposure cause problems. Particularly, the resist materials leaching tends to contaminate the surface of the lens. We have been conducting studies on the leaching during exposure using the QCM method. In the present work, we apply this method to the immersion exposure. We report here the results of an in-situ measurement of the resist mass change during immersion exposure and discuss our analysis regarding the resist materials leaching from the resist film during the exposure.
KEYWORDS: Absorption, Photoresist materials, Refraction, Transmittance, Data analysis, Lithography, Semiconducting wafers, Molecules, Quartz, Picture Archiving and Communication System
The experimental measurement of the photoresist ABC modeling parameters is described and three different data analysis techniques are compared. The best technique, the use of full exposure simulation to fit the data, is shown to be more accurate than the conventional data analysis method over a wide variety of typical substrates. In particular, artificial swing curve like behavior is observed on non-ideal substrates using the standard data analysis, but is readily accounted for in the more accurate full simulation method.
Resist simulation technology began with the presentation of Dill's lithography models over 20 years ago, and in the ensuing years has undergone various improvements. Basic parameters in resist modeling include the exposure parameters, bulk development parameters, diffusion length of the photoactive compound (PAC) due to post-exposure baking (PEB), and surface inhibition factors. (The exposure parameters are discussed in detail in 'Resist Metrology for Lithography Simulation, Part 1.') In this report, equipment and data analysis software capable of efficient and accurate determination of development parameters, the diffusion lengths of PAC due to PEB, and surface inhibition factors are discussed. In particular, the construction of equipment for the measurement of development rates is described, and techniques for extraction of development parameters, PAC diffusion lengths, and surface inhibition factors are discussed in detail and examples are given for a high resolution i-line resist.
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