Interdigitated metal-semiconductor-metal (MSM) photodetectors operating at 1550 nm were fabricated by depositing metal contacts on top of polycrystalline silicon (polysilicon), which was deposited by a variety of techniques. The highest responsivity was 0.66 mA/W, corresponding to an external quantum efficiency of 0.16%, obtained from a 2 μm thick polysilicon sample. Using Raman spectroscopy, it was found that polysilicon with grain sizes between 6 nm and 13 nm provides the best photoresponse at 1550nm.
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