Patternable dielectric materials were developed and introduced to reduce semiconductor manufacturing complexity and
cost of ownership (CoO). However, the bestowed dual functionalities of photo-imageable spin-on dielectrics (PSOD)
put great challenges on the material design and development. In this work, we investigated the combinatorial process
optimization for the negative-tone PSOD lithography by employing the Temperature Gradient Plate (TGP) technique
which significantly reduced the numbers of wafers processed and minimized the developmental time. We demonstrated
that this TGP combinatorial is very efficient at evaluating the effects and interactions of several independent variables
such as post-apply bake (PAB) and post-exposure bake (PEB). Unlike most of the conventional photoresists, PAB
turned out to have a great effect on the PSOD pattern profiles. Based on our extensive investigation, we observed great
correlation between PAB and PEB processes. In this paper, we will discuss the variation of pattern profiles as a matrix
of PAB and PEB and propose two possible cross-linking mechanisms for the PSOD materials to explain the unusual
experimental results.
EUV lithography is expected to be an important technology for manufacturing 22 nm node and beyond in the
semiconductor industry. To achieve the desired resist RLS performance for such fine feature patterns, multilayer
materials are almost certainly needed to define the overall lithography process. The resist modeling and experiment
studies suggest high EUV absorbance of the film improves resolution, line width roughness and sensitivity. In this paper,
we report the studies of new EUV underlayers (EBL) based on crosslinkable organic underlayer materials with high
EUV photon absorption (EPA) unit. The lithography results for the new EUV underlayer materials have demonstrated
advantages over conventional organic underlayer in terms of resist sensitivity, resolution, process window, pattern
profile, collapse margin, and possibly line width roughness.
Three polymer platforms based on acid labile blocked novolaks were investigated. The first, blended with Polyhydroxystyrene/
t-butylacrylate (PHSC), produced incompatible blends for the most part. Compatible blends were
obtained for the second platform by reacting novolak and PHSC together with alkylvinylether, which was optimized for
resist performance on Cu substrate at and below 10 μm film thickness. The third platform, based on a modified novolak
resin, achieved greater than 5 aspect ratio in 25 μm thick films.
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