A silicon-based germanium waveguide photodetector was demonstrated and its reliability related items were investigated. For different reverse biases, the slopes of the dark current increment versus stress time curves were first found to be the same, which made the lifetime extrapolation feasible. The lifetime of the photodetector under different bias was predicted by using a simple extrapolation method. In order to maintain the 10-year lifetime of the photodetector, the bias voltage should be kept lower than −3 V. For the first time, the degradation mechanism under stress biases was analyzed in detail by the reaction-diffusion (RD) model. The experimental results agree well with the theoretical derivation based on RD model.
A 30 Gb/s Ge waveguide photodetector was demonstrated and its reliability under elevated temperatures and high stress
biases were investigated. For different reverse biases, the slopes of the dark current increment versus stress bias time
curves were initiatively found to be the same and made the lifetime extrapolation feasible. The lifetime of the Ge
waveguide photodetector under different stress bias was predicted by using a simple extrapolation method. To maintain
the ten-year lifetime of the Ge waveguide photodetector, the bias voltage should be kept lower than -3V. For the first
time, the degradation mechanism under stress biases was analyzed in detail by the reaction-diffusion model. The
experimental results agree well to the theoretical derivation based on reaction-diffusion model.
Recent progress on Si-based optical components for advanced optical communication systems has been demonstrated. The polarization beam splitter with extinction ratio of more than 20 dB and the optical 90-deg hybrid having phase deviation within ±5-deg were obtained using multimode interference structures. The 12 Gb/s modulators and the 20 GHz photodetectors were measured. Benefiting from the unique properties of silicon modulator, an error-free 80 Km transmission of the signals generated by our silicon carrier-depletion Mach-Zehnder modulator was also demonstrated at 10 Gb/s and the power penalty was as low as 1.15 dB. These results show that silicon photonics has a great potential in advanced optical communication systems.
In this paper, we demonstrated recent progress on Si based optical components for advanced optical communication systems. The polarization beam splitter with extinction ratio of more than 20dB and the optical 90° hybrid having phase deviation within ±5° were obtained using MMI structures. The 12Gb/s modulators and the 20GHz photodetectors were measured. Benefiting from the unique properties of silicon modulator, an error-free 80Km transmission of the signals generated by our silicon carrier-depletion Mach-Zehnder modulator was also demonstrated at 10Gb/s and the power penalty was as low as 1.15dB. These results show that silicon photonics has a great potential in advanced optical communication systems.
A compact 1.6×10μm2 germanium pin waveguide photodetector was demonstrated on a Silicon-on-Insulator substrate. The dark current of the photodetector was measured to be 0.66μA at -1V bias voltage, which is much lower than recently reported. The photodetector exhibited a 3-dB bandwidth of 20GHz at the wavelength of 1.55μm. A clear open eye
diagram at 10Gb/s was also obtained.
We propose a novel optical modulator based on poly-on-silicon slot-loaded waveguide to fit the CMOS process and it
demonstrated a large loss reduction from 54.2dB/cm to 22.9dB/cm numerically compared with strip-loaded waveguide
structure.
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