Tapered semiconductor lasers have gained significant attention for their capability to achieve both high power and high beam quality. These lasers consist of an index-guided ridge waveguide and a gain-guided tapered amplifier. By implementing deep etching in the ridge section and introducing on-chip compressive stress in the tapered amplifier, the degree of polarization and beam quality of the laser output are improved. Combining the methods above, the polarization mismatch between the ridge and tapered sections is addressed and amplification efficiency is enhanced. The fabricated InGaAs/AlGaAs compressive strain single quantum well laser, emitting at a wavelength near 1μm, achieves continuous wave output of 11.57 W at tapered current of 14 A, with a degree of polarization exceeding 90%.
The high power diode lasers emission wavelength around 7xx nm are highly significant as pump sources for developing Rb alkali metal vapor laser and solid-state lasers based on thulium Tm: YAG. In this paper, 780 nm diode laser single emitter and bar have been designed and fabricated. The epitaxial layers were prepared by the metal organic chemical vapor deposition technology. GaAsP and GaInP were used as the quantum well and waveguide layer, respectively. The confinement layers were AlGaInP material with low refractive index. An amorphous ZnSe passivation layer was deposited on the laser cavity facets using ultra-high vacuum cleavage and passivation technology. The single emitter device with 150 μm width and 4 mm cavity length did not show the COMD phenomenon until 16.3 W continuous-wave output at 15 A. Meanwhile, The slope efficiency reached 1.27 W/A, and the electro-optic conversion efficiency was 58%. The divergence angle of slow-axis was 9.9°. In addition, the 1-cm laser bar with lateral emitter fill factors of 30% reached continuous-wave 180 W output power at 192 A, the electro-optic conversion efficiency was 50.7%, and the spectral width was 2.2nm.
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