We have developed new manufacturing processes based on ion irradiation to tailor the structural properties of ultra-thin magnetic films and spintronic devices at atomic level and improve their performances. The key feature of the technology is the post-growth control at the atomic scale of structural properties and the corresponding magnetic properties. When realized through a mask this technology allows lateral modulation of magnetic properties without any physical etching. In this talk, we will show a few important results that suggest a pathway to optimize the performances of future generation of spintronic devices using ion irradiation.
Tuning the Dzyaloshinskii-Moriya interaction (DMI) using electric (E)-fields in magnetic devices has opened up new perspectives for controlling the stabilization of chiral spin structures. Recent efforts have used voltage-induced charge redistribution at magnetic/oxides interfaces to modulate the DMI. This approach is attractive for active devices but tends to be volatile, making it energy-demanding. Here we demonstrate nonvolatile E-field manipulation of the DMI by ionic-liquid gating of Pt/Co/HfO2 ultra thin films. The E-field effect on the DMI is linked to the migration of oxygen species from the HfO2 layer into the Co and Pt layers and subsequent anchoring. This effect permanently changes the properties of the material, showing that E-fields can be used not only for local gating in devices but also as a material design tool for post growth tuning of the DMI.
One crucial breakthrough in spin electronics has recently been achieved regarding the possibility to move magnetic domain walls (DWs) in magnetic tracks using the sole action of an electrical current instead of a conventional magnetic field. Here, we will present our recent results of DW dynamics obtained in Ta-CoFeB-MgO nanodevices with perpendicular magnetic anisotropy (PMA), which are widely used in STT-RAM applications, and discuss the critical problems to be addressed for implementation into a memory device. Using NV center microscopy to map DW pinning along a magnetic wire, we will first show1 that Ta/CoFeB(1nm)/MgO structures exhibit a very low density of pinning defects with respect to others materials with PMA. Then, we will focus on the possibility to use Electric Field Effect to control domain wall motion with low power dissipation. We will demonstrate gate voltage modulation of DW dynamics using different approaches based on dielectrics, piezoelectrics and ionic liquid layers.
L. Herrera Diez, W. Lin, A. Bernand-Mantel, L. Ranno, D. Givord, L. Vila, P. Warin, A. Marty, N. Lei, T. Devolder, J. V. Kim, N. Vernier, P. Lecoeur, D. Ravelosona
Until now, spintronics devices have relied on polarized currents, which still generate relatively high dissipation,
particularly for nanodevices based on DW motion. A novel solution to further reduce power consumption is
emerging, based on electric field (E) gating to control the magnetic state. Here, we will describe the state of the
art and our recent experiments on voltage induced changes in the magnetic properties of ferromagnetic metals.
A thorough description of the advances in terms of control of intrinsic properties such as magnetic anisotropy
and ferromagnetic transition temperature as well as in intrinsic properties like coercive field and domain wall
motion will be presented. Additionally, a section will be dedicated to the summary of the key aspects concerning
the fabrication and performance of magneto-electric field-effect devices.
Conference Committee Involvement (13)
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20 August 2023 | San Diego, California, United States
Spintronics XV
21 August 2022 | San Diego, California, United States
Spintronics XIV
1 August 2021 | San Diego, California, United States
Spintronics XIII
24 August 2020 | Online Only, California, United States
Spintronics XII
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Spintronics XI
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Spintronics X
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Spintronics IX
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Spintronics VIII
9 August 2015 | San Diego, California, United States
Spintronics VII
17 August 2014 | San Diego, California, United States
Spintronics VI
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Spintronics V
12 August 2012 | San Diego, California, United States
Spintronics IV
21 August 2011 | San Diego, California, United States
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