We report on the fabrication of GaSb-based type-I quantum well distributed Bragg reflector (DBR) lasers operating in the 2-μm region. Second-order metallic gratings of chromium are patterned by electron beam lithography. The fabricated DBR lasers emit a single-mode continuous wave at 2.04 μm. The side mode suppression ratio (SMSR) is as high as 35dB with a narrow line-width of 37MHz. The devices show a stable single mode operation with current tuning rate of 0.006nm/mA.
We report cylinder photon traps, prism photon traps, and SiO2/Ta2O5 antireflection films added to the active areas of short wavelength infrared detectors. The total device thickness was estimated ~3.3μm and with the p-i-n structure based on antimonide. The simulation results show that the photon traps increase the absorption of the invisible spectrum distinctly. Also, the optical measurements reveal that maximal responsivity of the detector with PTs array is 0.094A/W in the visible range and 0.64A/W in the short wavelength infrared spectrum. The responsivity in the wavelength of short-wave infrared can be increased apparently as well. Thus, the photon traps array may a potential method for antimonide-based visible to short wavelength infrared bispectral photodetector.
Near-infrared InAs/GaSb Type-Ⅱ superlattices is widely used in biomimetics, sensing, color-imaging technology and other applications. An antireflection coating(AR coating) can help it perform better, making the infrared photodetector a higher responstivity and also a higher quantum efficiency. We produce a broadband AR coating by plasma-enhanced chemical vapor deposition(PECVD) then using the lift-off technology making no damage without any change in the usual Infrared detector process flow, a 260 nm SiO2 AR coating is transform onto the surface of the infrared photodetector. After using the AR coating, the antireflection can provide up to 40% light gain, while the average reflectivity of the surface of InAs/GaSb type-Ⅱ superlattice is decreased from 33% to 14%. The responsitivity is increased obviously.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.