Large area 2D Selective Area Growth (SAG) of Multi-Quantum Well (MQW) structures is a key methodology required for realization of monolithic multicolor arrays of Photonic Crystal Surface Emitting Lasers (PCSELs) We present a study of InGaAs/GaAs MQWs selectively grown in square SAG windows with dimensions up to 300 x 300 μm2, by MOCVD. The range of QW emission wavelengths and thickness enhancements are elucidated by room-temperature μ-Photoluminescence (PL) and Optical Profilometry (OP) mapping, respectively. It is shown that large areas, ⪅ 100 x 100 μm2, with uniform PL emission can be achieved within a PL tuning range of 86 nm.
We report epitaxially regrown Photonic Crystal Surface-Emitting Lasers (PCSELs) utilizing self-assembled InAs quantum dots (QDs) exhibiting lasing at room temperature. The ability to utilize both the ground-state (GS) and excited-state (ES) of the QDs allows multiple emission wavelengths from one heterostructure. The choice of the grating periods of the photonic crystal allows lasing from neighbouring devices at the GS (~1230 nm) or ES (~1140 nm) of the QDs, 90 nm apart in wavelength. The threshold current densities are 0.69 kA/cm2 and 1.05 kA/cm2 for GS and ES respectively. The effect of PC structures, specifically etch depth of the PC on lasing performance is also discussed.
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