Research Papers

Performance enhancement of deep violet indium gallium nitride double quantum well lasers using delta barrier close to electron blocking layer

[+] Author Affiliations
Ghasem Alahyarizadeh, Zainuriah Hassan, Alaa J. Ghazai, Hadi Mahmodi

University Science USM, Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Malaysia, 11800-Penang, Malaysia

Sabah M. Thahab

University of Kufa, Material Engineering Department, College of Engineering, Najaf, Iraq

J. Nanophoton. 6(1), 063514 (Jul 02, 2012). doi:10.1117/1.JNP.6.063514
History: Received December 17, 2011; Revised May 21, 2012; Accepted May 23, 2012
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Abstract.  A thin aluminum gallium nitride (AlGaN) electron blocking layer (EBL), above the active region, is used to improve the performance and reduce threshold current of indium gallium nitride (InGaN) quantum well (QW) lasers. A new structure, with delta barrier close to EBL (AlGaN/0.3nm GaN/InGaN), was devised to prevent deleterious polarization effects and confer other advantages. The effect of a 0.3 nm-thick GaN delta barrier on the performance of a deep violet InGaN double QW laser was investigated using ISE TCAD software. The results indicate that the delta barrier significantly enhances the output power, slope efficiency and external differential quantum efficiency while decreasing the threshold current.

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© 2012 Society of Photo-Optical Instrumentation Engineers

Citation

Ghasem Alahyarizadeh ; Zainuriah Hassan ; Sabah M. Thahab ; Alaa J. Ghazai and Hadi Mahmodi
"Performance enhancement of deep violet indium gallium nitride double quantum well lasers using delta barrier close to electron blocking layer", J. Nanophoton. 6(1), 063514 (Jul 02, 2012). ; http://dx.doi.org/10.1117/1.JNP.6.063514


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