Diamond deposition at low temperature by EACVD

Lifang Dong; Qingxun Zhao; Yong Shang; Boqin Ma

doi:10.1117/12.444935

19 October 2001 Diamond deposition at low temperature by EACVD

Lifang Dong, Qingxun Zhao, Yong Shang, Boqin Ma

Proceedings Volume 4580, Optoelectronics, Materials, and Devices for Communications; (2001) https://doi.org/10.1117/12.444935
Event: Asia-Pacific Optical and Wireless Communications Conference and Exhibit, 2001, Beijing, China

Abstract

In this paper, diamond film is deposited at low substrate temperature by electron-assisted chemical vapor deposition (EACVD). The quality of diamond film is analyzed by the scanning electron microscope (SEM), Raman spectrum and x-ray diffraction (XRD). The results show that the high quality film of (111) orientation is deposited at low temperature of about 500 degree(s)C by the EACVD technique. Meanwhile, the mechanism of the deposition at low temperature is also discussed.

Citation Download Citation

Lifang Dong, Qingxun Zhao, Yong Shang, and Boqin Ma "Diamond deposition at low temperature by EACVD", Proc. SPIE 4580, Optoelectronics, Materials, and Devices for Communications, (19 October 2001); https://doi.org/10.1117/12.444935

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