Enhancement of diffusion barrier properties of Ta by plasma immersion ion implantation

Mukesh Kumar; Raj Kumar; Dinesh Kumar; P. M. Raole; P. J. George; Suryakant B. Gupta; D. K. Paul

doi:10.1117/12.514859

14 October 2003 Enhancement of diffusion barrier properties of Ta by plasma immersion ion implantation

Mukesh Kumar, Raj Kumar, Dinesh Kumar, P. M. Raole, P. J. George, Suryakant B. Gupta, D. K. Paul

Proceedings Volume 5062, Smart Materials, Structures, and Systems; (2003) https://doi.org/10.1117/12.514859
Event: Smart Materials, Structures, and Systems, 2002, Bangalore, India

Abstract

Ta(N) film was synthesized by implanting the nitrogen ions in Ta films employing Plasma Immersion Ion implantation (PIII) technique. Silicon wafers coated with Ta were implanted with nitrogen at two different doses. Nitrogen ions implanted in the film render it to become Ta(N), which in effect hinders the grain boundary diffusion. The ion implantation was carried out for two doses 10¹⁵ions/cm² and 10¹⁷ions/cm² corresponding to low and high dose regime. Thereafter a copper layer was deposited on the samples to produce Cu/Ta(N)/Si structure. To evaluate the barrier properties of Ta(N) these samples were annealed up to 700°C for 30 minutes. Sheet resistance, X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM) measurements were carried out to investigate the effect of annealing.

Citation Download Citation

Mukesh Kumar, Raj Kumar, Dinesh Kumar, P. M. Raole, P. J. George, Suryakant B. Gupta, and D. K. Paul "Enhancement of diffusion barrier properties of Ta by plasma immersion ion implantation", Proc. SPIE 5062, Smart Materials, Structures, and Systems, (14 October 2003); https://doi.org/10.1117/12.514859

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