Diffusion barrier layer fabrication by plasma immersion ion implantation

Mukesh Kumar; - Rajkumar; Dinesh Kumar; P. J. George; A. K. Paul

doi:10.1117/12.501329

21 April 2003 Diffusion barrier layer fabrication by plasma immersion ion implantation

Mukesh Kumar, - Rajkumar, Dinesh Kumar, P. J. George, A. K. Paul

Proceedings Volume 5117, VLSI Circuits and Systems; (2003) https://doi.org/10.1117/12.501329
Event: Microtechnologies for the New Millennium 2003, 2003, Maspalomas, Gran Canaria, Canary Islands, Spain

Abstract

Plasma immersion Ion Implantation technique has been used to modify the diffusion barrier properties of titanium (Ti) metal layer against copper diffusion. Ti coated silicon wafer were implanted with doses viz. 10¹⁵ions/cm² and 10¹⁷ions/cm² corresponding to low and high dose regime. High dose of implantation of nitrogen ions in the film render it to become Ti(N). Cu/Ti(N)/Si structures were formed by depositing copper over the implanted samples. Diffusion barrier properties of Ti(N) was evaluated after annealing the samples up to 700 degrees C for 30 minutes. Sheet resistance, X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM) measurements were carried out to investigate the effect of annealing. Low dose implanted Ti layer does not show any change in its diffusion barrier properties and fails at about 400 degrees C. The failure of diffusion barrier properties of low dose implanted samples is attributed to the chemical reaction between titanium and copper films. The high dose implanted layer stops the diffusion of Cu metal through it even at high annealing temperature. The enhancement in its diffusion barrier properties is supposed to be due to nitridation of titanium film which increases the activation energy involved for its chemical reaction with copper metal film.

Citation Download Citation

Mukesh Kumar, - Rajkumar, Dinesh Kumar, P. J. George, and A. K. Paul "Diffusion barrier layer fabrication by plasma immersion ion implantation", Proc. SPIE 5117, VLSI Circuits and Systems, (21 April 2003); https://doi.org/10.1117/12.501329

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